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2N3637CSM |
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| Part Number | 2N3637CSM |
| Manufacturer | Seme LAB |
| Description | 2N3637CSM MECHANICAL DATA Dimensions in mm (inches) 0.51 ± 0.10 (0.02 ± 0.004) PNP SILICON TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS 0.31 r... |
| Features |
• High Voltage Switching • Low Power Amplifier Applications A 1.40 (0.055) max. 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) 0.31 rad. (0.012) • Hermetic Ceramic Surface Mount Package A = 1.02 ± 0.10 (0.04 ± 0.004) LCC1 Underside View PAD 1 – Base PAD 2 – Emitter PAD 3 – Collector APPLICATIONS: • CECC Screening Options • Space Quality Levels Options. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCEO VCBO VEBO IC PD TJ , TSTG Collector – Emitter Voltage Collector – Base Voltage Emmiter – Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Oper... |
| Document |
 2N3637CSM Data Sheet
PDF 15.89KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N3637 |
Seme LAB |
PNP SILICON TRANSISTOR |
|
| 2 | 2N3637 |
Microsemi Corporation |
PNP SILICON AMPLIFIER TRANSISTOR |
|
| 3 | 2N3637 |
Central Semiconductor |
PNP SILICON TRANSISTOR |
|
| 4 | 2N3637 |
CDIL |
PNP SILICON PLANAR RF TRANSISTORS |
|
| 5 | 2N3637 |
ON Semiconductor |
Low Power Transistors |
|