| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
SeCoS |
Dual P-Ch Enhancement Mode Power MOSFET Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING J4411 =Date Code PACKAGE INFORMATION Package MPQ DFN3x3-8DJ 5K Leader Size 13 inch REF. A B C D E F G Millimeter Min. Max. 2.9 |
|
|
|
|
SeCoS |
N-Channel Shielded Gate Trench Power MOSFET Shielded Gate Trench Technology Super Low Gate Charge Green Device Available MARKING SPR-8PP 100N03S = Date code S D PACKAGE INFORMATION S D S D Package MPQ Leader Size G D SPR-8PP 3K 13 inch ORDER INFORMATION Part Num |
|
|
|
|
SeCoS |
N-Channel Shielded Gate Trench Power MOSFET Shielded Gate Trench Technology Super Low Gate Charge Green Device Available MARKING SPR-8PP 30N03S = Date Code S PACKAGE INFORMATION S Package MPQ Leader Size S SPR-8PP 3K 13 inch G ORDER INFORMATION Part Number Type SSP |
|
|
|
|
SeCoS |
P-Channel Enhancement Mode Power MOSFET Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING 32P03 = Date code REF. A B C D E F Millimeter Min. Max. 3.00 3.40 3.00 3.25 3.20 3.45 3.00 3.20 0.65 BSC. 2.39 2.60 REF. G H I J K L Millimeter Min. |
|
|
|
|
SeCoS |
N-Channel Enhancement Mode Power MOSFET Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING SPR-8PP 18N10 = Date code PACKAGE INFORMATION Package MPQ Leader Size SPR-8PP 3K 13 inch S ORDER INFORMATION S Part Number Type S SSPR18N10 |
|
|
|
|
SeCoS Halbleitertechnologie |
N-Channel MOSFET θ e E Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DFN3x3-8PP saves board space Fast switching speed High performance trench technology A d b g APPLICATION DC-DC converters and p |
|
|
|
|
SeCoS |
Dual-Channel MOSFET Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING J4504 =Date Code PACKAGE INFORMATION Package MPQ DFN3x3-8DJ 5K Leader Size 13 inch DFN3x3-8DJ REF. A B C D E F G Millimeter Min. Max. 2.9 3 |
|
|
|
|
SeCoS |
N-Channel Enhancement Mode Power MOSFET Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING SPR-8PP 10N06 = Date code PACKAGE INFORMATION Package MPQ Leader Size SPR-8PP 3K 13 inch S ORDER INFORMATION S Part Number T |
|
|
|
|
SeCoS |
N-Channel Enhancement Mode Power MOSFET Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8PP saves board space. Fast switching speed. High performance trench technology. PACKAGE INFORMATION Package MPQ SOP-8PP 3K Lead |
|
|
|
|
SeCoS |
N-Channel Enhancement Mode Power MOSFET Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING 7N10 = Date code PACKAGE INFORMATION Package MPQ SPR-8PP 3K Leader Size 13 inch REF. A B C D E F Millimeter Min. Max. 3.25 3.40 3.05 3.25 3.20 3.40 3.00 3.20 |
|
|
|
|
SeCoS |
N-Channel Enhancement Mode Power MOSFET Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING 60N03 = Date code PACKAGE INFORMATION Package MPQ SPR-8PP 3K Leader Size 13 inch REF. A B C D E F Millimeter Min. Max. 3.25 3.40 3.05 3.25 3.20 3.40 3.00 3.20 |
|
|
|
|
SeCoS |
N-Channel Enhancement Mode Power MOSFET Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING 46N03 = Date code PACKAGE INFORMATION Package MPQ SPR-8PP 3K Leader Size 13 inch REF. A B C D E F Millimeter Min. Max. 3.25 3.40 3.05 3.25 3.20 3.40 3.00 3.20 |
|
|
|
|
SeCoS |
N-Channel Enhancement Mode Power MOSFET Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING 40N06 = Date code PACKAGE INFORMATION Package MPQ SPR-8PP 3K Leader Size 13 inch REF. A B C D E F Millimeter Min. Max. 3.25 3.40 3.05 3.25 3.20 3.40 3.00 3.20 |
|
|
|
|
SeCoS Halbleitertechnologie |
N-Channel MOSFET Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8PP saves board space. Fast switching speed. High performance trench technology. PACKAGE INFORMATION Package SOP-8PP MPQ 3K Leader |
|
|
|
|
SeCoS Halbleitertechnologie |
N-Channel MOSFET Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. PACKAGE INFORMATION Package DFN3*3-8PP MPQ 3K Leader Size 13’ |
|
|
|
|
SeCoS Halbleitertechnologie |
N-Channel MOSFET Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. REF. A B C D Millimeter Min. Max. 3.0 BSC. 2.8 BSC. 0.20 0.35 0 |
|
|
|
|
SeCoS |
N-Channel MOSFET Low RDS(on) trench technology Low thermal impedance Fast switching speed APPLICATION Industrial D/C/DC conversion circuits White LED boost converters Automotive systems PACKAGE INFORMATION Package MPQ DFN3x3-8PP 3K Leader Size 13 inch DFN3x3- |
|
|
|
|
SeCoS |
P-Channel MOSFET Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8PP saves board space. Fast switching speed. High performance trench technology. APPLICATION DC-DC converters and power management in |
|
|
|
|
SeCoS |
N-Channel MOSFET Low RDS(ON) trench technology Low thermal resistance Fast switching speed APPLICATIONS White LED boost converter Automotive systems Industrial DC/DC conversion circuits PACKAGE INFORMATION Package MPQ SOP-8PP 3K Leader Size 13 inch REF. Milli |
|
|
|
|
SeCoS |
N-Ch Enhancement Mode Power MOSFET Low RDS(ON) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DFN3x3-8PP saves board space Fast switching speed High performance trench technology APPLICATION DC-DC converters and power management in |
|