SSPR7N10 |
Part Number | SSPR7N10 |
Manufacturer | SeCoS |
Description | The SSPR7N10 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SPR-8PP package is universally preferred for all ... |
Features |
Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic
MARKING
7N10
= Date code
PACKAGE INFORMATION
Package
MPQ
SPR-8PP
3K
Leader Size 13 inch
REF.
A B C D E F
Millimeter Min. Max. 3.25 3.40 3.05 3.25 3.20 3.40 3.00 3.20
0.65 BSC. 2.40 2.60
REF.
G H I J K L
Millimeter Min. Max. 1.35 1.55 0.24 0.35
1.13 REF. 0.30 0.50 0.10 0.20 0.70 0.90
SD SD SD GD
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current 1@VGS=10V TC=25°C TC=70°C
Pulsed Drain Current 2 Single Puls... |
Document |
SSPR7N10 Data Sheet
PDF 469.90KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | SSPR100N03S-C |
SeCoS |
N-Channel Shielded Gate Trench Power MOSFET | |
2 | SSPR10N06-C |
SeCoS |
N-Channel Enhancement Mode Power MOSFET | |
3 | SSPR10N10-C |
SeCoS |
N-Channel Enhancement Mode Power MOSFET | |
4 | SSPR18N10 |
SeCoS |
N-Channel Enhancement Mode Power MOSFET | |
5 | SSPR18N10-C |
SeCoS |
N-Channel Enhancement Mode Power MOSFET |