| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
SeCoS |
Dual-P Enhancement Mode MOSFET Low RDS(on) Trench Technology Low Thermal Impedance Fast Switching Speed APPLICATIONS Battery-Powered Instruments Portable Computing Mobile Phones GPS Units and Media Players MARKING 2P02 = Date Code PACKAGE INFORMATION Package MPQ DFN2×2-6L-J |
|
|
|
|
SeCoS |
N-Channel MOSFET TrenchFET power MOSFET Low RDS(on) Typical ESD protection APPICTIONS Load switch and battery protection MARKING 3005 PACKAGE INFORMATION Package MPQ DFN2*2-6J 3K Leader Size 7 inch REF. A B C D E F G Millimeter Min. Max. 1.924 2.076 1.924 2. |
|
|
|
|
SeCoS |
Dual-P Enhancement Mode MOSFET Low RDS(ON) Trench Technology Low Thermal Impedance Fast Switching Speed DFN2x2-6L-J APPLICATIONS Battery Powered Instruments Portable Computing Mobile Phones GPS Units and Media Players MARKING 2P03 = Date code PACKAGE INFORMATION Package MPQ |
|
|
|
|
SeCoS |
P-Channel Enhancement Mode Power MOSFET Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 7A5P03 . = Date code PACKAGE INFORMATION Package MPQ DFN2×2-6J 3K Leader Size 7 inch REF. A B C D E F G Millimeter Min. Max. 1.924 2.076 1.924 |
|
|
|
|
SeCoS |
Dual P-Channel MOSFET Low RDS(on) trench technology Low thermal impedance Fast switching speed APPLICATIONS Battery-powered instruments Portable computing Mobile phones GPS units and media players PACKAGE INFORMATION Package MPQ DFN2×2-6L-J 3K Leader Size 7 inch R |
|
|
|
|
SeCoS |
Dual MOSFET Surface Mount Package Super High Density Cell Design for Extremely Low RDS(ON) Exceptional On-resistance and Maximum DC Current Capability DFN2x2-6L-J APPLICATIONS Power Management In Note Book Portable Equipment DC/DC Converter Load Switch MARKIN |
|
|
|
|
SeCoS |
P-Channel MOSFET Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING 1216 PACKAGE INFORMATION Package MPQ DFN2*2-6L 3K Leader Size 7 inch REF. A B C D E F G Millimeter Min. Max. 1.924 2.076 1.924 2.076 0.46 0.66 0.65 TYP. 0. |
|
|
|
|
SeCoS |
N-Ch Enhancement Mode Power MOSFET The SDT4A6N10ESV-C is the Shielded Gate Technology N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SDT4A6N10ESV-C meet the RoHS and Green Produc |
|
|
|
|
SeCoS |
Dual-P Enhancement Mode MOSFET er Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current 1 @VGS=4.5V Pulsed Drain Current 3 TA=25°C ID TA=70°C IDM Total Power Dissipation TA=25°C PD Operating Junction and Storage Temperature Range TJ, TSTG Th |
|
|
|
|
SeCoS |
P-Channel Enhancement Mode Power MOSFET Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 9A5P02 . = Date code PACKAGE INFORMATION Package MPQ DFN2×2-6J 3K Leader Size 7 inch DFN2x2-6J REF. A B C D E F G Millimeter Min. Max. 1.924 |
|
|
|
|
SeCoS |
Dual-N Enhancement Mode MOSFET Low RDS(on) trench technology Low thermal impedance Fast switching speed DFN2x2-6L-J APPLICATIONS Battery-powered instruments Portable Computing Mobile Phones GPS Units and Media Players PACKAGE INFORMATION Package MPQ DFN2×2-6L-J 3K Leader S |
|
|
|
|
SeCoS |
N-Channel Enhancement Mode Power MOSFET Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 3A5N06 . = Date code PACKAGE INFORMATION Package MPQ DFN2×2-6J 3K Leader Size 7 inch DFN2x2-6J REF. A B C D E F G Millimeter Min. Max. 1.924 |
|