SDT1216 |
Part Number | SDT1216 |
Manufacturer | SeCoS |
Description | The SDT1216 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DFN2*2-6J package is universally preferred for all... |
Features |
Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING 1216 PACKAGE INFORMATION Package MPQ DFN2*2-6L 3K Leader Size 7 inch REF. A B C D E F G Millimeter Min. Max. 1.924 2.076 1.924 2.076 0.46 0.66 0.65 TYP. 0.20 0.40 0.80 1.00 0.174 0.326 REF. H I J K L M Millimeter Min. Max. 0.20 - 0.85 1.05 0.70 0.90 0.20 0.40 0.203REF 0.00 0.05 Top View ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (t≤10s) Pulsed Drain Current 1 Power Dissipat... |
Document |
SDT1216 Data Sheet
PDF 274.45KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | SDT122 |
Silicon Power |
THYRISTOR | |
2 | SDT12A120P5 |
DIODES |
TRENCH SCHOTTKY BARRIER RECTIFIER | |
3 | SDT12D |
AUK |
TVS Diode | |
4 | SDT12S |
AUK |
TVS Diode | |
5 | SDT12S60 |
Infineon Technologies AG |
Silicon Carbide Schottky Diode |