| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
SavantIC |
Silicon NPN Power Transistors oltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IC=4A ;IB=0.4A IC=1A;VCE= |
|
|
|
|
SavantIC |
Silicon NPN Power Transistors =1mA , IB=0 V(BR)CBO Collector-base breakdown voltage IC=50µA , IE=0 V(BR)EBO Emitter-base breakdown voltage IE=50µA , IC=0 VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A VBEsat Base-emitter saturation voltage IC=2A ;IB=0.2A ICBO |
|
|
|
|
SavantIC |
Silicon NPN Power Transistors m Collector-emitter breakdown voltage IC=5mA; IB=0 100 V V(BR)CBO Collector-base breakdown voltage IC=50µA; IE=0 100 V VCEsat Collector-emitter saturation voltage IC=3A ;IB=6mA 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 10 |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR ter cut-off current DC current gain Transition frequency CONDITIONS IC=50mA ;IB=0 IE=1mA ;IC=0 IC=5A ; IB=0.5A IC=5A ; IB=0.5A VCB=90V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=4V IC=0.5A ; VCE=12V 40 8 MIN 60 6 www.datasheet4u.com 2SD201 SYMBOL V(BR)CEO V(BR |
|
|
|
|
SavantIC |
2SD2060 BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 V(BR)EBO Emitter-base breakdown voltage IE=10mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.3A VBE Base-emitter on voltage IC=3A;VCE=5V ICBO Collector cut-off current V |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR ctor-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=1m |
|
|
|
|
SavantIC |
2SD2023 kdown voltage IC=50µA; IE=0 V(BR)EBO Emitter-base breakdown voltage IE=50µA; IC=0 VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A VBEsat Base-emitter saturation voltage IC=2A; IB=0.2A ICBO Collector cut-off current VCB=60V; IE=0 |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR Collector output capacitance CONDITIONS IC=50mA ;IB=0 IC=2A ;IB=0.2A IC=0.5A;VCE=5V VCB=60V; IE=0 VEB=7V; IC=0 IC=0.5A ; VCE=5V IC=0.5A ; VCE=5V f=1MHz;VCB=10V 60 MIN 60 www.datasheet4u.com KSD2058 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE fT COB |
|
|
|
|
SavantIC |
2SD2053 voltage IC=25mA; IB=0 VCEsat Collector-emitter saturation voltage IC=7A; IB=0.7A VBE Base-emitter on voltage IC=7A;VCE=5V ICBO Collector cut-off current VCB=150V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=20mA |
|
|
|
|
SavantIC |
Silicon NPN Power Transistors m Collector-emitter breakdown voltage IC=5mA; IB=0 100 V V(BR)CBO Collector-base breakdown voltage IC=50µA; IE=0 100 V VCEsat Collector-emitter saturation voltage IC=3A ;IB=6mA 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 10 |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR aturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=25mA , IB=0 IC=4A;IB=0.4A IC=4A;IB=0.4A VCB=80V;IE=0 VEB=6V; IC=0 IC=1A ; VCE=4V IC=4A ; VCE=4V IC=0.2A; VCE=12V;f= |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR tion voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IC=2A ;IB=0.2A IC=0.5A;VCE=5V VCB=60V; IE=0 VEB=7V; IC=0 |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR saturation voltage Collector cut-off current Emitter cut-off current DC current gain Collector output capacitance Transition frequency CONDITIONS IC=10mA; IB=0 IC=50µA; IE=0 IE=50µA; IC=0 IC=2A; IB=0.2A IC=2A; IB=0.2A VCB=60V; IE=0 VEB=5V; IC=0 IC=1 |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR llector-base breakdown voltage IC=50µA; IE=0 100 V VCEsat Collector-emitter saturation voltage IC=3A ;IB=6mA 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 3.0 mA hFE DC current |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR r-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IC=8A ;IB=0.8A IC=8A ; VCE= |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR e Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IE=10mA ;IC=0 IC=3A ;IB=0.3A I |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR cut-off current DC current gain DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=25mA; IB=0 IC=8A; IB=0.8A IC=8A;VCE=5V VCB=160V; IE=0 VEB=5V; IC=0 IC=20mA ; VCE=5V IC=1A ; VCE=5V IC=8A ; VCE=5V IC=0.5A |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR voltage Emitter cut-off current Collector cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=8A;IB=16m A IC=8A;IB=16m A IC=10mA;IB=0 VEB=6V; IC=0 VCB=120V; IE=0 IC=8 A ; VCE=4V IC=1 A ; VCE=12V IE=0 ; VCB=10V;f=1MH |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collec |
|
|
|
|
SavantIC |
SILICON POWER TRANSISTOR rent Emitter cut-off current DC current gain DC current gain CONDITIONS IC=100mA; IB=0 IE=1mA; IC=0 IC=2A; IB=0.6A IC=2A; IB=0.6A VCB=500V;IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=5V IC=2A ; VCE=5V 8 2.5 MIN 600 6 www.datasheet4u.com 2SD200 SYMBOL VCEO(SUS) |
|