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D2025 |
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| Part Number | D2025 |
| Manufacturer | SavantIC |
| Description | ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·DARLINGTON ·Complement to type 2SB1344 www.DataSheet4U.com APPLICATIONS ·For low frequency power amplifier and power driver appli... |
| Features |
m
Collector-emitter breakdown voltage
IC=5mA; IB=0
100
V
V(BR)CBO
Collector-base breakdown voltage
IC=50µA; IE=0
100
V
VCEsat
Collector-emitter saturation voltage
IC=3A ;IB=6mA
1.5
V
ICBO
Collector cut-off current
VCB=100V; IE=0
10
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
3.0
mA
hFE
DC current gain
IC=2A ; VCE=3V
1000
20000
fT
Transition frequency
IC=0.2A ; VCE=5V
40
MHz
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
50
pF
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD2025
www.DataSheet4U.com
Fig.... |
| Document |
 D2025 Data Sheet
PDF 149.04KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | D2020UK |
Seme LAB |
METAL GATE RF SILICON FET |
|
| 2 | D2020UK-P |
Seme LAB |
METAL GATE RF SILICON FET |
|
| 3 | D2020UK.01 |
Seme LAB |
METAL GATE RF SILICON FET |
|
| 4 | D2020UK.02 |
Seme LAB |
METAL GATE RF SILICON FET |
|
| 5 | D2021UK |
Seme LAB |
METAL GATE RF SILICON FET |
|