| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanyo Semicon Device |
2SJ634 • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. 2SJ634 P-Channel Silicon MOSFET 2SJ634 DC / DC Converter Applications Package Dimensions unit : mm 2083B [2SJ634] 6.5 5.0 2.3 4 0.5 5.5 1.5 7.0 0.85 0.7 1.2 0.8 1.6 7.5 0.6 12 3 2. |
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Sanyo Semicon Device |
P-Channel Silicon MOSFET General-Purpose Switching Device Applications • • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. DC / DC Converter. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Curr |
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Sanyo Semicon Device |
DC/DC FOR CONVERTER |
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Sanyo Semicon Device |
2SJ636 |
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Sanyo Semicon Device |
P CHANNEL MOS SILICON TRANSISTOR • • • Package Dimensions unit : mm 2062A [2SJ632] 4.5 1.6 1.5 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 0.5 3 1.5 2 3.0 (Bottom view) 1 1.0 0.4 2.5 4.25max 0.4 0.75 1 : Gate 2 : Drain 3 : Source SANYO : PCP Specifications Abs |
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Sanyo Semicon Device |
DC/DC Converter Applications • • • Package Dimensions unit : mm 2083B [2SJ633] 6.5 5.0 4 1.5 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 2.3 0.5 0.85 0.7 0.8 1.6 5.5 7.0 1.2 7.5 0.6 0.5 1 2 3 1 : Gate 2 : Drain 3 : Source 4 : Drain 2.3 2.3 www.DataShee |
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Sanyo Semicon Device |
General-Purpose Switching Device Applications • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Curr |
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Sanyo Semicon Device |
DC/ DC CONVERTER TRANSISTOR |
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