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2SJ630 |
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| Part Number | 2SJ630 |
| Manufacturer | Sanyo Semicon Device |
| Description | www.DataSheet4U.com Ordering number : ENA0489 2SJ630 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ630 Features • • • General-Purpose Switching Device Applications Low ON-resistan... |
| Features |
• • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (600mm2!0.8mm) Tc=25°C Conditions Ratings --12 ±8 --6 --24 1.5 3.5 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Vo... |
| Document |
 2SJ630 Data Sheet
PDF 64.28KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SJ632 |
Sanyo Semicon Device |
P CHANNEL MOS SILICON TRANSISTOR |
|
| 2 | 2SJ633 |
Sanyo Semicon Device |
DC/DC Converter Applications |
|
| 3 | 2SJ634 |
Sanyo Semicon Device |
DC/ DC CONVERTER TRANSISTOR |
|
| 4 | 2SJ635 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
|
| 5 | 2SJ636 |
Sanyo Semicon Device |
2SJ636 |
|