| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanyo Semicon Device |
30V/ 200mA Rectifier · Low forward voltage (VF max=0.55V) . · Fast reverse recorvery time (trr max=10ns) . · Composite type with 2 diodes contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC804 is formed with two chips, each b |
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Sanyo Semicon Device |
30V/ 500mA Rectifier · Low forward voltage (VF max=0.55V) . · Fast reverse recorvery time (trr max=10ns) . · Composite type with 2 diodes contained in the CP package currently in use, saving the mounting space greatly. · The FC805 is formed with two chips, each being equ |
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Sanyo Semicon Device |
30V/ 70mA Rectifier · Low forward voltage (VF max=0.55V) . · Fast reverse recorvery time (trr max=10ns) . · Composite type with 4 diodes contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC803 is formed with twi chips, each b |
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Sanyo Semicon Device |
High-Speed Switching Composite Diode Cathode Common · Composite type with 4 diodes contained in the CP package currently in use, saving the mounting space greatly. · Fast switching speed. Package Dimensions unit:mm 1250A [FC808] 1:Anode 2:Anode 3:Anode 4:Cathode 5:Anode Specifications Absolute Maxi |
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Sanyo Semicon Device |
Composite Diode for High-Speed Switching Applications · Composite type with 4 diodes contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC801 is formed with two chips, each being equivalent to the DCA015, placed in one package. Package Dimensions unit:mm 1232 |
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Sanyo Semicon Device |
Composite Diode for High-Speed Switching Applications · Composite type with 4 diodes cintained in the CP package currently in use, resulting in the greatly improved circuit board using efficiency. · The FC802 is formed with two chips, each being equivalent to the DCB015, placed in one package. · Fast sw |
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Sanyo Semicon Device |
50V/ 100mA Rectifier · Low forward voltage (VF max=0.55V) . · Fast reverse recorvery time (trr max=10ns) . · Composite type with 2 diodes contained in the CP package currently in use, saving the mounting space greatly. · The FC806 is formed with two chips, each being equ |
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Sanyo Semicon Device |
High-Speed Switching Composite Diode Anode Common · Composite type with 4diodes contined in the CP package currently in use, improving the mouting efficiency greatly. · Fast switching speed. Package Dimensions unit:mm 1249A [FC807] 1:Cathode 2:Cathode 3:Cathode 4:Anode 5:Cathode Specifications Ab |
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Sanyo Semicon Device |
30V/ 70mA Rectifier · Low forward voltage (VF max=0.55V) . · Fast reverse recovery time (trr max=10ns) . · Composite type with 2 diodes contained in the CP package currently in use, saving the mounting space greatly. · The FC809 is formed with two chips, each being equi |
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Sanyo Semicon Device |
15V/ 700mA Rectifier · Low forward voltage (VF max=0.55V) . · Fast reverse recorvery time (trr max=10ns) . · Composite type with 2 diodes contained in the CP package currently in use, saving the mounting space greatly. · The FC810 is formed with two chips, each being equ |
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