| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanyo Semicon Device |
PNP/NPN Transistors · High DC current gain. · Large current capacity and wide ASO. · Low saturation voltage. Package Dimensions unit:mm 2010C [2SB880/2SD1190] ( ) : 2SB880 Specifications JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Absolute Maxi |
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Sanyo Semicon Device |
PNP/NPN Transistors · High DC current gain. · High current capacity and wide ASO. · Low saturation voltage. Package Dimensions unit:mm 2010C [2SB882/2SD1192] ( ) : 2SB882 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Colle |
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Sanyo Semicon Device |
2SD1111 · High DC Current Gain (5000 or greater). · Large current capacity and wide ASO. · Low saturation voltage (VCE(sat)=0.8V typ). Package Dimensions unit:mm 2003B [2SD1111] 5.0 4.0 4.0 5.0 0.45 0.5 2.0 0.6 0.45 0.44 14.0 Specifications A |
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Sanyo Semicon Device |
NPN TRANSISTOR · High DC Current Gain (5000 or greater). · Large current capacity and wide ASO. · Low saturation voltage (VCE(sat)=0.8V typ). Package Dimensions unit:mm 2003B [2SD1111] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.0 Specifications Absolute Maxi |
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Sanyo Semicon Device |
PNP/NPN Transistors · High DC current gain. · High current capacity and wide ASO. · Low saturaion voltage. Package Dimensions unit:mm 2010C [2SB881/2SD1191] ( ) : 2SB881 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Volta |
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Sanyo Semicon Device |
PNP/NPN Transistors · High DC current gain. · High current capacity and wide ASO. · Low saturation voltage. 18.0 2.7 5.6 1.2 0.8 14.0 15.1 6.3 0.4 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitte |
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Sanyo Semicon Device |
2SD1192 · High DC current gain. · High current capacity and wide ASO. · Low saturation voltage. Package Dimensions unit:mm 2010C [2SB882/2SD1192] ( ) : 2SB882 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Colle |
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Sanyo Semicon Device |
2SD1190 · High DC current gain. · Large current capacity and wide ASO. · Low saturation voltage. Package Dimensions unit:mm 2010C [2SB880/2SD1190] ( ) : 2SB880 Specifications JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Absolute Maxi |
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Sanyo Semicon Device |
0.2W Zener Diodes · Reference voltage use. · Votlage regulators use. · Power dissipation : P=200mW. · Voltage range : ±2.5% subdivided. · High reliability due to planar type. · Ideally suited for use in hybrid ICs because of ultra small package. Package Dimensions un |
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Sanyo Semicon Device |
NPN TRANSISTOR · Low saturation voltage. · Large current capacity and wide ASO. 0.5 0.6 6.0 14.0 3.0 8.5 0.5 0.5 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Volta |
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Sanyo Semicon Device |
NPN TRANSISTOR · High DC current gain (4000 or more). · Large current capacity and wide ASO. · Low saturation voltage. Package Dimensions unit:mm 2006B [2SB865/2SD1153] 6.0 5.0 4.7 0.5 0.6 6.0 3.0 14.0 8.5 0.5 0.5 ( ) : 2SB865 Specifications Absolute Maximum |
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Sanyo Semicon Device |
NPN TRANSISTOR · Capable of efficient drive with small internal loss due to excellent tf. Package Dimensions unit:mm 2010C [2SD1159] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 2.7 14.0 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C |
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Sanyo Semicon Device |
PNP/NPN Transistors · High DC current gain. · High current capacity and wide ASO. · Low saturation voltage. 2.0 1.6 2.0 20.0 0.6 1.0 1 0.6 2 3 1.3 1.2 15.0 20.0 ( ) : 2SB883 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage |
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Sanyo Semicon Device |
PNP/NPN Transistors · High DC current gain. · High current capacity and wide ASO. · Low saturation voltage. Package Dimensions unit:mm 2010C [2SB884/2SD1194] ( ) : 2SB884 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Colle |
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Sanyo Semicon Device |
PNP/NPN Transistors · High DC current gain. · High current capacity and wide ASO. · Low saturation voltage. Package Dimensions unit:mm 2010C [2SB886/2SD1196] ( ) : 2SB886 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Colle |
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Sanyo Semicon Device |
PNP/NPN Transistors · Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. Package Dimensions unit:mm 2022A [2SB887/2SD1197] Features · High DC current gain. · Large current capacity and wide ASO. · Low saturation voltage. ( ) : 2SB887 1 |
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Sanyo Semicon Device |
2SD1153 |
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Sanyo Semicon Device |
2SD1193 · High DC current gain. · High current capacity and wide ASO. · Low saturation voltage. 2.0 1.6 2.0 20.0 0.6 1.0 1 0.6 2 3 1.3 1.2 15.0 20.0 ( ) : 2SB883 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage |
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Sanyo Semicon Device |
2SD1196 |
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Sanyo Semicon Device |
2SD1195 · High DC current gain. · High current capacity and wide ASO. · Low saturation voltage. 18.0 2.7 5.6 1.2 0.8 14.0 15.1 6.3 0.4 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitte |
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