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2SD1159 |
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| Part Number | 2SD1159 |
| Manufacturer | Sanyo Semicon Device |
| Description | Ordering number:EN837E NPN Triple Diffused Planar Silicon Transistor 2SD1159 TV Horizontal Deflection Output, High-Current Switching Applications Features · Capable of efficient drive with small int... |
| Features |
· Capable of efficient drive with small internal loss due to excellent tf. Package Dimensions unit:mm 2010C [2SD1159] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 2.7 14.0 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC C... |
| Document |
 2SD1159 Data Sheet
PDF 75.55KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD1151 |
ETC |
Si NPN triple diffused planar Transistor |
|
| 2 | 2SD1153 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 3 | 2SD1154 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | 2SD1157 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 5 | 2SD1158 |
INCHANGE |
NPN Transistor |
|