| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Sanyo Semicon Device |
N-Channel and P-Channel Silicon MOSFETs • Package Dimensions • • • Dual chip device for high-density mounting. unit : mm One of the encapsulated devices is a P-channel MOSFET 2202 featuring low ON-resistance and high-speed switching. The other is an N-channel small signal MOSFET used fo |
|
|
|
|
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications • • • Package Dimensions unit : mm 2151A [CPH6352] 6 5 4 0.6 0.05 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 1 2 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Cur |
|
|
|
|
Sanyo Semicon Device |
Pin Diode • • • Package Dimensions unit : mm 1294 [CPH5513] 2.9 Small interterminal capacitance (C=0.23pF typ). Small forward series resistance (rs=2.5Ω typ). Composite type with 2 diodes contained in a CPH package currently in use, improving the mounting ef |
|
|
|
|
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications • • • Package Dimensions unit : mm 2152A [CPH3307] 2.9 0.4 0.15 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.6 3 0.05 1 1.9 2 0.6 1.6 2.8 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Specifications Absolute Maximum Ratings at |
|
|
|
|
Sanyo Semicon Device |
N-Channel Silicon MOSFET · The CPH5801 composite device consists of following two devices to facilitate high-density mounting. One is an N-channel MOSFET that features low ON resistance, high-speed switching, and low driving voltage. The other is a shottky barrier diode that |
|
|
|
|
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications • • • Package Dimensions unit : mm 2152A [CPH3319] 2.9 0.4 0.15 Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. 0.6 3 0.05 1 1.9 2 0.6 1.6 2.8 0.7 0.9 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Absolute Maximum Ratings at Ta=25 |
|
|
|
|
Sanyo Semicon Device |
General-Purpose Switching Device Applications • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Curr |
|
|
|
|
Sanyo Semicon Device |
N-Channel Silicon MOSFET • Package Dimensions • The CPH5809 composite device consists of followunit : mm ing two devices to facilitate high-density mounting. 2171 One is an N-channel MOSFET that features low ONresistance, ultrahigh-speed switching, and low driving voltage |
|
|
|
|
Sanyo Semicon Device |
Low Frequency General Purpose Amplifier • Package Dimensions unit : mm 2187 [CPH6521] 6 5 4 • • • • Composite type with 2 transistors contained in the CPH package currently in use, improving the mounting efficiency greatly. The CPH6521 is formed with two chips, being equivalent to the |
|
|
|
|
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor • • • Composite type with two PNP transistors contained in one package facilitating high-density mounting. The two chips contained are equivalent to the CPH3116. Ultrasmall package permitting applied sets to be small and slim. Specifications Absolu |
|
|
|
|
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor • • • Composite type with two NPN transistors contained in one package facilitating high-density mounting. The two chips contained are equivalent to the CPH3216. Ultrasmall package permitting applied sets to be small and slim. Specifications Absolu |
|
|
|
|
Sanyo Semicon Device |
N-Channel Silicon MOSFET • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (P |
|
|
|
|
Sanyo Semicon Device |
P-Channel Silicon MOSFET • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance RDS(on)1=190mΩ(typ.) 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Vo |
|
|
|
|
Sanyo Semicon Device |
P-Channel Silicon MOSFET • • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance RDS(on)1=77mΩ(typ.) 4V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Volt |
|
|
|
|
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors • Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density mounting • Ultrasmall package facilitate miniaturization in end products. (0.9mm mounting height) Specifications ( ): PNP Absolute Maxim |
|
|
|
|
Sanyo Semicon Device |
PNP/NPN Silicon Epitaxial Planar Transistors · Adoption of MBIT processes. · High current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall-sized package permitting applied sets to be made small and slim (0.9mm). · High allowable power dissipation. |
|
|
|
|
Sanyo Semicon Device |
PNP Transistor · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall-sized package permitting applied sets to be made small and slim (mounting height : 0.9mm). · High allowable |
|
|
|
|
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications · Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. Package Dimensions unit:mm 2152 [CPH3303] 2.9 0.4 0.6 0.2 0.15 3 0 to 0.1 1.6 2.8 1 1.9 2 0.2 0.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source |
|
|
|
|
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2152A [CPH3305] 0.4 3 0.6 0.2 2.9 0.15 0.05 1.6 2.8 1 1.9 2 0.2 0.6 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Specifications Absolute Maximum Ratings |
|
|
|
|
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2152A [CPH3306] 0.4 3 0.6 0.05 1 1.9 2 0.2 0.6 1.6 2.8 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Specifications Absolute Maximum Ratings at Ta = 25˚C |
|