Sanyo Semicon Device A21 fiche technique

No.	Partie #	Fabricant	Description
1	A2169	Sanyo Semicon Device	2SA2169 • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications ( ) : 2SA2169 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitte
2	2SA2112	Sanyo Semicon Device	PNP Transistors • • • • 1.0 Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. 4.5 0.6 1.0 0.9 0.5 1 2 3 0.45 1 : Emitter 2 : Collector 3 : Base Specifications Absolute Maximum Ratings
3	2SA2181	Sanyo Semicon Device	PNP Epitaxial Planar Silicon Transistor • • • • Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Em
4	A2112	Sanyo Semicon Device	2SA2112 • • • • 1.0 Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. 4.5 0.6 1.0 0.9 0.5 1 2 3 0.45 1 : Emitter 2 : Collector 3 : Base Specifications Absolute Maximum Ratings
5	A2117	Sanyo Semicon Device	PNP / NPN Epitaxial Planar Silicon Transistors • Adoption of MBIT process. • High-speed switching. • Large current capacitance. • Low collector-to-emitter saturation voltage. Package Dimensions unit : mm 2041A [2SA2117 / 2SC5934] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 Specifications ( ) : 2SA
6	2SA2169	Sanyo Semicon Device	PNP / NPN Epitaxial Planar Silicon Transistors • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications ( ) : 2SA2169 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitte
7	2SA2168	Sanyo Semicon Device	PNP Epitaxial Planar Silicon Transistor • • PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Adoption of MBIT process. High breakdown voltage and large current capacity. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Co
8	2SA2126	Sanyo Semicon Device	PNP Epitaxial Planar Silicon Transistor • Adoption of MBIT processes • Low collector-to-emitter saturation voltage • High current capacitance • High-speed switching Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltag
9	2SA2125	Sanyo Semicon Device	PNP / NPN Epitaxial Planar Silicon Transistors • • • • Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications ( ) : 2SA2125 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter
10	2SA2192	Sanyo Semicon Device	PNP Epitaxial Planar Silicon Transistor • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitte
11	2SA2179	Sanyo Semicon Device	PNP Epitaxial Planar Silicon Transistor • • • • Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Em
12	2SA2180	Sanyo Semicon Device	PNP Epitaxial Planar Silicon Transistor • • • • Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Em
13	2SA2186	Sanyo Semicon Device	PNP Epitaxial Planar Silicon Transistor • • • • Adoption of MBIT processes. High current capacity. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitte
14	2SA2124	Sanyo Semicon Device	PNP Epitaxial Planar Silicon Transistors • • • • Adoption of MBIT processes. Low collector-to-emitter saturation voltage. High current capacity. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitte
15	2SA2196	Sanyo Semicon Device	PNP / NPN Epitaxial Planar Silicon Transistors • • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications ( ) : 2SA2196 Absolute Maximum Ratings at Ta=25°C Parameter Collector
16	2SA2197	Sanyo Semicon Device	PNP / NPN Epitaxial Planar Silicon Transistors • • • • • Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications ( ) : 2SA2197 Absolute Maximum Ratings at Ta=25°C Parameter Collector
17	2SA2117	Sanyo Semicon Device	PNP / NPN Epitaxial Planar Silicon Transistors • Adoption of MBIT process. • High-speed switching. • Large current capacitance. • Low collector-to-emitter saturation voltage. Package Dimensions unit : mm 2041A [2SA2117 / 2SC5934] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 Specifications ( ) : 2SA