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2SA2112 |
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| Part Number | 2SA2112 |
| Manufacturer | Sanyo Semicon Device |
| Description | Ordering number : ENN7379 2SA2112 PNP Epitaxial Planar Silicon Transistors 2SA2112 High Current Switching Applications Applications • Package Dimensions unit : mm 2064A [2SA2112] 2.5 1.45 6.9 1.0 ... |
| Features |
• • • • 1.0 Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. 4.5 0.6 1.0 0.9 0.5 1 2 3 0.45 1 : Emitter 2 : Collector 3 : Base Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Conditions 2.54 2.54 SANYO : NMP Ratings --50 --50... |
| Document |
 2SA2112 Data Sheet
PDF 28.68KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA2112 |
ON Semiconductor |
Bipolar Transistor |
|
| 2 | 2SA2113 |
Rohm |
Medium power transistor |
|
| 3 | 2SA2117 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 4 | 2SA2118 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor |
|
| 5 | 2SA2119K |
Rohm |
Low frequency transistor |
|