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Sanyo Semicon Device |
2SA1606 · Micaless package facilitating mounting. ( ) : 2SA1606 E : Emitter C : Collector B : Base SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Volta |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
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Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor · Adoption of FBET, MBIT processes. · Low saturation voltage. · Fast switching speed. · Large current capacity. · Small and slim package making it easy to make 2SA1641-used set smaller. Package Dimensions unit:mm 2045B [2SA1641] unit:mm 2044B 1 : |
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Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor • High breakdown voltage (VCEO≥300V). • Small reverse transfer capacitance and excellent high frequency characteristic (Cre : 1.5pF typ). • Excellent DC current gain ratio (hFE ratio : 1.0 typ). • Adoption of FBET process. Specifications Absolute M |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Ultrasmall-sized package permitting the 2SA1687/ 2SC4446-applied sets to be made small and slim. · High VEBO. Package Dimensions unit:mm 2059B [2SA1687/2SC4446] 0.425 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 0.425 12 0.65 0.65 2.0 0.3 0.6 0.9 |
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Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistors · High breakdown voltage. · Small reverse transfer capacitance and excellent high frequency characteristic. · Excellent DC current gain. · Adoption of FBET process. Package Dimensions unit:mm 2003B [2SA1689] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 |
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Sanyo Semicon Device |
40V 16A Rectifier · Low forward voltage (VF max=0.55V). · Fast reverse recovery time. · Low switching noise. · High reliability due to highly reliable planar structure. · Surface mount type device facilitating compactness and high density of SBA160-04Y-applied sets. 1 |
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Sanyo Semicon Device |
PNP EPITAXIAL PLANAR SILICON TRANSISTOR |
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Sanyo Semicon Device |
2SA1607 · Fast switching speed. · High gain-bandwidth product. · Low saturation voltage. PNP/NPN Epitaxial Planar Silicon Transistors 2SA1607/2SC4168 High-Speed Switching Applications Package Dimensions unit:mm 2018A [2SA1607/2SC4168] ( ) : 2SA1607 Specifi |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Fast switching speed. · High gain-bandwidth product. · Low saturation voltage. PNP/NPN Epitaxial Planar Silicon Transistors 2SA1607/2SC4168 High-Speed Switching Applications Package Dimensions unit:mm 2018A [2SA1607/2SC4168] ( ) : 2SA1607 Specifi |
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Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistors · High cutoff frequnecy : fT=3.0GHz typ. · High power gain : MAG=11dB typ (f=0.9GHz) · Small noise figure : NF=2.0dB typ (f=0.9GHz) Package Dimensions unit:mm 2018B [2SA1669] 0.4 3 0.16 0 to 0.1 1.5 0.5 2.5 0.5 1 0.95 0.95 2 1.9 2.9 0.8 1.1 S |
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Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistors · Adoption of FBET process. · High breakdown voltage : VCEO>80V. Package Dimensions unit:mm 2033A [2SA1683/2SC4414] 4.0 2.2 1.8 3.0 0.6 0.4 0.5 0.4 0.4 15.0 ( ) : 2SA1683 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collect |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Fast switching speed. · High gain-bandwidth product. · Low saturation voltage. PNP/NPN Epitaxial Planar Silicon Transistors 2SA1685/2SC4443 High-Speed Switching Applications Package Dimensions unit:mm 2059 [2SA1685/2SC4443] ( ) : 2SA1685 Specifi |
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Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistors · High power gain : PG=22dB typ (f=100MHz). · Ultrasmall-sized package permitting 2SA1688- applied sets to be made small and slim. 0.425 Package Dimensions unit:mm 2059B [2SA1688] 0.3 3 0.15 0.2 0 to 0.1 2.1 1.250 0.425 12 0.65 0.65 2.0 0.3 |
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Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistors · High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity. PNP Epitaxial Planar Silicon Transistors 2SA1699 High-Voltage Driver Applications Package Dimensions unit:mm 2003A [2SA1699] Specifications Absolute Maximum Ratings a |
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Sanyo Semicon Device |
40V 16A Rectifier · Low forward voltage (VF max=0.55V). · Fast reverse recovery time. · Low switching noise. · High reliability due to highly reliable planar structure. · Micaless package facilitating easy mounting. 1:Anode 2:Cathode 3:Anode SANYO:TO-3PML Specificati |
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Sanyo Semicon Device |
90V 16A Rectifier · Low forward voltage (VF max=0.75V). · Fast reverse recovery time. · Low switching noise. · High reliability due to highly reliable planar structure. · Micaless package facilitating easy mounting. 1:Anode 2:Cathode 3:Anode SANYO:TO-3PML Specificati |
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Sanyo Semicon Device |
2SA1641 |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Micaless package facilitating mounting. ( ) : 2SA1606 E : Emitter C : Collector B : Base SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Volta |
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