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2SA1683 |
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| Part Number | 2SA1683 |
| Manufacturer | Sanyo Semicon Device |
| Description | Ordering number:ENN3012 PNP Epitaxial Planar Silicon Transistors 2SA1683/2SC4414 Low-Frequency General-Purpose Amplifier, Low-Frequency Power Amplifier Applications Features · Adoption of FBET proce... |
| Features |
· Adoption of FBET process. · High breakdown voltage : VCEO>80V. Package Dimensions unit:mm 2033A [2SA1683/2SC4414] 4.0 2.2 1.8 3.0 0.6 0.4 0.5 0.4 0.4 15.0 ( ) : 2SA1683 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Electrical Characteristics at Ta = 25˚C 123 1.3 1.3 0.7 0.7 Conditions 3.0 3.8 Parameter Symbol Conditions... |
| Document |
 2SA1683 Data Sheet
PDF 40.01KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA1680 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 2 | 2SA1681 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 3 | 2SA1682 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
| 4 | 2SA1685 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 5 | 2SA1687 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|