No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · High breakdown voltage : VCEO≤200V. · Small reverse transfer capacitance and excellent high frequency characteristics : Cre=1.2pF (NPN), 1.7pF (PNP). · Adoption of FBET process. 3.0 1.5 7.0 1.6 0.8 0.8 0.6 3.0 11.0 15.5 0.5 ( ) : 2SA1352 2. |
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Sanyo Semicon Device |
MONOLITHIC LINEAR IC |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
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Sanyo Semicon Device |
2SA1371 |
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Sanyo Semicon Device |
PNP/NPN Silicon Transistor |
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Sanyo Semicon Device |
PNP/NPN Silicon Transistor |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high-frequnecy characteristics : Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V. · Adoption of FBET process Package Dimensions unit:mm 2009B [2SA1380/2SC3502] 8.0 4. |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Hgih breakdown voltage. · Excellent hFE linearity. · Wide ASO and highly resistant to breakdown. · Adoption of MBIT process. Switching Test Circuit Package Dimensions unit:mm 2003A [2SA1319/2SC3332] ( ) : 2SA1319 (For PNP, the polarity is revers |
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Sanyo Semicon Device |
(LA1362 - LA1365 / LA1357) MONOLITHIC LINEAR IC |
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Sanyo Semicon Device |
2SA1319 · Hgih breakdown voltage. · Excellent hFE linearity. · Wide ASO and highly resistant to breakdown. · Adoption of MBIT process. Switching Test Circuit Package Dimensions unit:mm 2003A [2SA1319/2SC3332] ( ) : 2SA1319 (For PNP, the polarity is revers |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Hgih breakdown voltage. · Excellent hFE linearity. · Wide ASO and highly resistant to breakdown. · Adoption of MBIT process. Package Dimensions unit:mm 2003A [2SA1319/2SC3332] Switching Test Circuit (For PNP, the polarity is reversed) Unit (resi |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Very small-sized package permitting sets to be smallsized, slim. · High breakdown voltage : VCEO=( –)50V. · Complementary pair transistor having large current capacity and high fT. · Adoption of FBET process. Switching Time Test Circuit Package Dim |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · High breakdown voltage : VCEO≤300V. · Excellent high frequency characteristics : Cre=1.8pF(typ). · Adoption of MBIT process. 3.0 1.5 7.0 1.6 0.8 0.8 0.6 3.0 11.0 15.5 0.5 ( ) : 2SA1353 2.4 4.8 Specifications Absolute Maximum Ratings at Ta |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · High breakdown votage : VCEO≥300V. · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8pF (NPN), 2.3pF (PNP). · Adoption of MBIT process. 4.7 0.5 0.6 6.0 14.0 3.0 8.5 0.5 0.5 1 2 3 ( ) : 2SA1371 Speci |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Adoption of FBET process. · AF amp. PNP/NPN Epitaxial Planar Silicon Transistors 2SA1392/2SC3383 AF Amp Applications Package Dimensions unit:mm 2003A [2SA1392/2SC3383] ( ) : 2SA1392 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter |
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Sanyo Semicon Device |
2SA1352 · High breakdown voltage : VCEO≤200V. · Small reverse transfer capacitance and excellent high frequency characteristics : Cre=1.2pF (NPN), 1.7pF (PNP). · Adoption of FBET process. 3.0 1.5 7.0 1.6 0.8 0.8 0.6 3.0 11.0 15.5 0.5 ( ) : 2SA1352 2. |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Fast switching speed. · High breakdown voltage. · Small-sized package permitting the 2SA1331/ 2SC3361-applied sets to be made small and slim. Switching Time Test Circuit Package Dimensions unit:mm 2018A [2SA1331/2SC3361] ( ) : 2SA1331 (For PNP, |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Adoption of FBET process. · High breakdown voltage : VCEO=( –)50V. · Large current capacitiy and high fT. · Very small-sized package permitting sets to be small- sized, slim. Package Dimensions unit:mm 2018A [2SA1338/2SC3392] Switching Time Test C |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.2pF (NPN), 1.7pF (PNP). · Adoption of FBET process. ( ) : 2SA1370 EIAJ : SC-51 SANYO : MP Specifications Absolute Maximu |
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