2SA1319 |
Part Number | 2SA1319 |
Manufacturer | Sanyo Semicon Device |
Description | Ordering number:EN1334C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1319/2SC3332 High-Voltage Switching Applications Features · Hgih breakdown voltage. · Excellent hFE linearity. · Wide ASO and ... |
Features |
· Hgih breakdown voltage. · Excellent hFE linearity. · Wide ASO and highly resistant to breakdown. · Adoption of MBIT process. Package Dimensions unit:mm 2003A [2SA1319/2SC3332] Switching Test Circuit (For PNP, the polarity is reversed) Unit (resistance : Ω, capacitance : F) ( ) : 2SA1319 JEDEC : TO-92 EIAJ : SC-43 SANYO : NP B : Base C : Collector E : Emitter Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature S... |
Document |
2SA1319 Data Sheet
PDF 130.85KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SA1310 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor | |
2 | 2SA1310 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer type Transistor | |
3 | 2SA1312 |
Toshiba Semiconductor |
Silicon PNP Transistor | |
4 | 2SA1313 |
Toshiba Semiconductor |
Silicon PNP Transistor | |
5 | 2SA1314 |
Toshiba Semiconductor |
TRANSISTOR |