| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanyo Semicon Device |
Monolithic Linear IC • High sensitivity on limiting : 18µV typ. • Low distortion : 0.05% typ. determined by the linearity of phase characteristics in phase shifting circuit. • High demodulation output : 330 mVrms typ. • High S/N ratio : 78.5dB typ. • Muting at detuning w |
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Sanyo Semicon Device |
2SA1207 · Adoption of FBET process. · High breakdown voltage. · Excellent linearity of h FE and small C ob. · Fast switching speed. Package Dimensions unit:mm 2003B [2SA1207/2SC2909] 5.0 4.0 4.0 0.45 0.5 0.6 2.0 0.45 0.44 14.0 1 2 3 5.0 ( ) : 2SA1207 Sp |
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Sanyo Semicon Device |
High-Precision CRT Display Video Output Amplifier |
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Sanyo Semicon Device |
2SA1208 · Adoption of FBET process. · High breakdown voltage. · Excellent linearity of hFE and small Cob. · Fast swtching speed. Package Dimensions unit:mm 2006A [2SA1208/2SC2910] ( ) : 2SA1208 Specifications EIAJ:SC-51 SANYO:MP B:Base C:Collector E:Emit |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · High breakdown voltage. · Large current capacity. · Using MBIT process Package Dimensions unit:mm 2009B [2SA1248/2SC3116] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SA1248 Specifications Absolute Maximum Ratings a |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · High breakdown voltage. · Large current capacity. · Adoption of MBIT process. Package Dimensions unit:mm 2009B [2SA1249/2SC3117] 8.0 4.0 2.7 1.5 3.0 7.0 11.0 1.6 0.8 0.8 0.6 3.0 0.5 15.5 ( ) : 2SA1249 Specifications Absolute Maximum Ra |
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Sanyo Semicon Device |
2SA1246 · High VEBO. · Wide ASO and highly resistant to breakdown. Package Dimensions unit:mm 2003B [2SA1246/2SC3114] 5.0 4.0 4.0 0.45 0.5 0.6 2.0 0.45 0.44 14.0 1 2 3 5.0 ( ) : 2SA1246 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Coll |
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Sanyo Semicon Device |
PNP/NPN Transistors · High fT. · High switching speed. · Wide ASO. Package Dimensions unit:mm 2010C [2SA1259/2SC3145] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 2.7 14.0 ( ) : 2SA1259 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Colle |
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Sanyo Semicon Device |
PNP/NPN Transistors · Low saturation voltage. · Excellent current dependence of hFE. · Short switching time. ( ) : 2SA1289 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Co |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Low saturation voltage. · Excellent dependence of hFE on current. · Fast switching time. ( ) : 2SA1292 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base |
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Sanyo Semicon Device |
2SA1252 26 reset threshold options 2.5 V to 5 V in 100 mV increments 4 reset timeout options 1 ms, 20 ms, 140 ms, and 1120 ms (minimum) 4 watchdog timeout options 6.3 ms, 102 ms, 1.6 sec, and 25.6 sec (typical) Manual reset input Multiple reset output option |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Adoption of FBET process. · High breakdown voltage. · Excellent linearity of hFE and small Cob. · Fast switching speed. Package Dimensions unit:mm 2003B [2SA1207/2SC2909] 5.0 4.0 4.0 0.45 0.5 0.6 2.0 0.45 0.44 14.0 1 2 3 5.0 ( ) : 2SA1207 Spec |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Adoption of FBET process. · High breakdown voltage. · Excellent linearity of hFE and small Cob. · Fast swtching speed. Package Dimensions unit:mm 2006B [2SA1208/2SC2910] 6.0 5.0 4.7 0.5 0.6 6.0 14.0 3.0 8.5 0.5 0.5 1 2 3 ( ) : 2SA1208 Spe |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · High VEBO. · Wide ASO and highly resistant to breakdown. Package Dimensions unit:mm 2003B [2SA1246/2SC3114] 5.0 4.0 4.0 0.45 0.5 0.6 2.0 0.45 0.44 14.0 1 2 3 5.0 ( ) : 2SA1246 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Coll |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · High VEBO. · Wide ASO and high durability against breakdown. Package Dimensions unit:mm 2033A [2SA1253/2SC3135] 4.0 2.2 1.8 3.0 0.6 0.4 0.5 0.4 0.4 15.0 ( ) : 2SA1253 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol C |
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Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistors · High fT (230MHz typ), and small Cre (1.1pF typ). · Small NF (2.5dB typ). Package Dimensions unit:mm 2018B [2SA1256] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Very small-sized package permitting the 2SA1257/ 2SC3143-applied sets to be made small and slim. · High breakdown voltage (VCEO≥160V). · Small output capacitance. Package Dimensions unit:mm 2018B [2SA1257/2SC3143] 0.4 3 0.16 0 to 0.1 1.5 0.5 2. |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Darlington Transistors · High fT. · High switching speed. · Wide ASO. Package Dimensions unit:mm 2010C [2SA1258/2SC3144] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 2.7 14.0 ( ) : 2SA1258 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Colle |
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Sanyo Semicon Device |
PNP/NPN Transistors · Low saturation voltage. · Excellent current dependence of hFE. · Short switching time. ( ) : 2SA1290 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base V |
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Sanyo Semicon Device |
PNP/NPN Transistors · Low saturation voltage. · Excellent current dependence of hFE. · Short switching time. ( ) : 2SA1291 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Co |
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