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2SA1207 |
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| Part Number | 2SA1207 |
| Manufacturer | Sanyo Semicon Device |
| Description | www.DataSheet.co.kr Ordering number:ENN778F PNP/NPN Epitaxial Planar Silicon Transistors 2SA1207/2SC2909 High-Voltage Switching AF 60W Predriver Applications Features · Adoption of FBET process. · ... |
| Features |
· Adoption of FBET process. · High breakdown voltage. · Excellent linearity of hFE and small Cob. · Fast switching speed. Package Dimensions unit:mm 2003B [2SA1207/2SC2909] 5.0 4.0 4.0 0.45 0.5 0.6 2.0 0.45 0.44 14.0 1 2 3 5.0 ( ) : 2SA1207 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 1.3 1.3 1 : Emitter 2 : Collector 3 : Base SANYO : ... |
| Document |
 2SA1207 Data Sheet
PDF 100.06KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA1200 |
Toshiba Semiconductor |
SILICON PNP TRIPLE DIFFUSED TRANSISTOR |
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| 2 | 2SA1200 |
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PNP Transistors |
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| 3 | 2SA1201 |
Toshiba Semiconductor |
Silicon PNP Transistor |
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| 4 | 2SA1201 |
GME |
Plastic-Encapsulate Transistors |
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| 5 | 2SA1201 |
WILLAS |
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