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Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications · Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. Package Dimensions unit:mm 2178 5.0 4.0 [3LP02N] 4.0 0.45 0.5 0.6 2.0 5.0 0.45 0.44 1 2 3 14.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source |
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Sanyo Semicon Device |
P-Channel Silicon MOSFET • • • • General-Purpose Switching Device Applications Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage (TYP 300V) [Built-in one side diode for protection between Gate-to-Source]. Specifications Absolute Maximum Ratings at Ta=2 |
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Sanyo Semicon Device |
P-Channel Silicon MOSFET • • • • General-Purpose Switching Device Applications Low ON-resistance. High-speed switching. 2.5V drive. High resistance to damage from ESD (TYP 300V) [with a protection diode connected between the gate and source]. Specifications Absolute Maxim |
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Sanyo Semicon Device |
Ultra-compact FM tuner • No external components • No alignments necessary • Fully integrated low IF selectivity and demodulation • Built-in adjacent channel interference total reduction (no 114kHz, no 190kHz) • Due to new tuning concept, the tuning is independent of the ch |
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Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications • • • Package Dimensions unit : mm 2091A [3LP01C] 0.5 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.4 0.16 0 to 0.1 3 1 0.95 0.95 2 1.9 2.9 0.5 1.5 2.5 1 : Gate 2 : Source 3 : Drain 0.8 1.1 SANYO : CP Specifications Absolute |
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Sanyo Semicon Device |
P `lMOS `VRdEgWX^ XCb`Op |
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Sanyo Semicon Device |
P-Channel Silicon MOSFET • • • Package Dimensions unit : mm 2158 [3LP01M] 0.425 0.3 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.15 3 2.1 1.250 0 to 0.1 0.425 1 2 0.65 0.65 2.0 0.3 0.9 0.6 0.2 1 : Gate 2 : Source 3 : Drain SANYO : MCP Specifications |
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Sanyo Semicon Device |
P-Channel Silicon MOSFET • • • Package Dimensions unit : mm 2178 5.0 4.0 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. [3LP01N] 4.0 0.45 0.5 0.6 2.0 5.0 0.45 0.44 1 2 3 14.0 1 : Source 2 : Drain 3 : Gate 1.3 Specifications Absolute Maximum Ratings a |
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Sanyo Semicon Device |
P-Channel Silicon MOSFET • • • Package Dimensions unit : mm 2179 [3LP01SS] 1.4 0.3 Low ON-resistance. Ultrahigh-Speed Switching. 2.5V drive. 0.25 0.1 3 0.8 1.4 0.2 0.3 1 0.45 2 1 : Gate 2 : Source 3 : Drain 0.6 SANYO : SSFP Specifications Absolute Maximum Ratings |
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Sanyo Semicon Device |
P-Channel Silicon MOSFET · Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. Package Dimensions unit:mm 2158 [3LP02M] 0.425 0.15 3 2.1 1.250 0 to 0.1 0.425 1 2 0.65 0.65 2.0 0.3 0.9 0.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain |
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Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications · Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. Package Dimensions unit:mm 2180 [3LP02SP] 4.0 3.0 2.2 0.4 0.5 0.6 1.8 15.0 0.4 0.4 1 2 1.3 0.7 3 1.3 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to- |
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Sanyo Semicon Device |
P-Channel Silicon MOSFET • General-Purpose Switching Device Applications 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Te |
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Sanyo Semicon Device |
Cell Phone Power Supply IC • Low power dissipation • Built-in shorting protection circuit Specifications Maximum Ratings at Ta = 25°C Parameter Maximum supply voltage Allowable power dissipation Operating temperature Storage temperature Symbol VCC max Pd max Topr Tstg Mounted |
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Sanyo Semicon Device |
3ch LED Driver max VINB IO max VSTBY Topr Tstg Mounted on the specified board * Conditions Ratings 6.0 6.0 5.5 6.0 12.0 6.0 -30 to +75 -40 to +125 Unit V V W V mA V °C °C The specified board *: 50mm × 40mm × 0.8mm glass epoxy (4-layer circuit board). Any and all |
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Sanyo Semicon Device |
P-Channel Silicon MOSFET • Low ON-resistance • Ultrahigh-speed switching • 2.5V drive P-Channel Silicon MOSFET General-Purpose Switching Device Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain-to-Source Voltage Gate-to-S |
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