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Sanyo Semicon Device |
2SB1204 |
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Sanyo Semicon Device |
PNP Transistor · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity and wide ASO. Package Dimensions unit:mm 2003A [2SB926/2SD1246] ( ) : 2SB926 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base |
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Sanyo Semicon Device |
2SB631K · High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity. Package Dimensions unit:mm 2009B [2SB631, 631K/2SD600, 600K] ( ) : 2SB631, 631K 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126 Specific |
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Sanyo Semicon Device |
2SB1143 · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity and wide ASO. 1.6 0.8 1.4 4.0 1.0 3.3 3.0 1.5 3.0 0.8 0.75 7.5 15.5 11.0 0.7 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Col |
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Sanyo Semicon Device |
2SB1225 |
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Sanyo Semicon Device |
2SB764 E=( –)2V, IC=( –)1A VCE=( –)10V, IC=( –)50mA VCB=( –)10V, f=1MHz IC=( –)500mA, IB=( –)50mA IC=( –)500mA, IB=( –)50mA 60* 30 150 (20) 12 ( –0.2) 0.15 ( –)0.85 ( –0.7) 0.5 ( –)1.2 MHz pF pF V V V Conditions Ratings min typ max ( –)1 ( –)1 320* Unit µA µA Any and all |
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Sanyo Semicon Device |
2SB1140 · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity. · Short switching time. 1.6 0.8 1.4 3.3 3.0 1.5 3.0 0.8 0.75 7.5 15.5 11.0 0.7 1 2 3 4.8 Specifications Absolute Maximum Ratings at Ta = 25˚C Parame |
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Sanyo Semicon Device |
2SB1406 · Darlington connection. · High DC current gain. · Large current capacity. Package Dimensions unit:mm 2064 [2SB1406] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Em |
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Sanyo Semicon Device |
2SB1134 · Low-saturation collector-to-emitter voltage : VCE(sat)= –0.4V max/IC=( –)3A, IB=( –)0.3A. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SB1134/2SD1667] ( ) : 2SB1134 1 : Base 2 : Collector 3 : Emitter Specifications |
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Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Transistors • Low saturation voltage. • Contains diode between collector and emitter. • Contains bias resistance between base and emitter. • Large current capacitance. • Small-sized package making it easy to provide high- density, small-sized hybrid ICs. Packag |
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Sanyo Semicon Device |
2SB1202 · Adoption of FBET, MBIT processes. · Large currrent capacity and wide ASO. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small and slim package making it easy to make 2SB1202/2SD1802-used sets smaller. Package Dimensions |
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Sanyo Semicon Device |
2SB829 · Low-saturation collector-to-emitter voltage : VCE(sat) = –0.5V max. · Wide ASO leading to high resistance to breakdown. Package Dimensions unit:mm 2022A [2SD829/2SD1065] ( ) : 2SB829 Specifications Absolute Maximum Ratings at Ta = 25˚C Paramete |
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Sanyo Semicon Device |
PNP/NPN Transistors · High DC current gain. · Large current capacity and wide ASO. · Micaless package facilitaing mounting. Package Dimensions unit:mm 2041A [2SB1224/2SD1826] ( ) : 2SB1224 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to- |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · Suitable for sets whose height is restricted. · Low collector to emitter saturation voltage : VCE(sat)= –0.5V (PNP), 0.4V (NPN) max. · Large current capacity. Package Dimensions unit:mm 2049B [2SB1267/2SD1903] ( ) : 2SB1267 Specifications E : Emi |
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Sanyo Semicon Device |
2SB1232 · Large current capacity and wide ASO. · Low saturation voltage. ( ) : 2SB1232 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Specifications Absolute Maximum Ratings at Ta = 25˚C Pl arameter CV ollector-to-Base Voltage CV ollector-to-Emitter Vo |
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Sanyo Semicon Device |
2SB927 · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity and wide ASO. www.DataSheet4U.com 0.5 0.6 4.7 6.0 14.0 3.0 8.5 0.5 0.5 1 2 3 ( ) : 2SB927 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter C |
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Sanyo Semicon Device |
2SB825 · Low saturation voltage : VCE(sat)=( –)0.4V max. · Wide ASO Package Dimensions unit:mm 2010C [2SB825/2SD1061] ( ) : 2SB825 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emit |
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Sanyo Semicon Device |
2SB1144 · Adoption of FBET and MBIT processes. · High breakdown voltage. · Low saturation voltage. · Plastic-covered heat sink facilitating high-density mounting. Package Dimensions unit:mm 2042B [2SB1144/2SD1684] ( ) : 2SB1144 1 : Emitter 2 : Collector 3 |
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Sanyo Semicon Device |
2SB880 · High DC current gain. · Large current capacity and wide ASO. · Low saturation voltage. Package Dimensions unit:mm 2010C [2SB880/2SD1190] ( ) : 2SB880 Specifications JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Absolute Maxi |
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Sanyo Semicon Device |
PNP Transistor · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity. · Fast switching speed. Package Dimensions unit:mm 2009A [2SB1127] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Co |
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