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B631K |
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| Part Number | B631K |
| Manufacturer | Sanyo Semicon Device |
| Description | www.DataSheet4U.com Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features · High breakdown voltag... |
| Features |
· High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity. Package Dimensions unit:mm 2009B [2SB631, 631K/2SD600, 600K] ( ) : 2SB631, 631K 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Conditions 2SB631, D600 ( –)100 ( –)100 2SB631K, D600K ( –)120 ( –)120 ( –)5 ( –)1... |
| Document |
 B631K Data Sheet
PDF 155.39KB |
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