| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanyo |
LE25FV055T 5 56 63 64 71 FFH Add. Add. Add. X X High Impedance N N+1 N+2 DATA DATA DATA MSB MSB MSB LE25FV055T CS SCK SI SO 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 23 24 31 9FH High Impedance MSB DATA DATA DATA MSB MSB CS SCK SI SO 0 1 2 3 4 5 6 |
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Sanyo Electric |
LE25FV051T CMOS Flash EEPROM Technology Single 3.3-Volt Read and Write Operations Sector Erase Capability: 256 Bytes per sector Operating Frequency: 10MHz Low Power Consumption Active Current (Read): 10 mA (Max.) Standby Current: 20 µA (Max.) Serial Peripheral |
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Sanyo Semicon Device |
Two Wire Serial Interface EEPROM to prohibit write operations under low voltage conditions. • Package : LE24C023M MFP8(225mil) * I2C Bus is a trademark of Philips Corporation. * This product is licensed from Silicon Storage Technology, Inc. (USA), and manufactured and sold by SANYO |
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Sanyo Semicon Device |
1MEG (131072 words x 8 bits) Flash Memory • Highly reliable 2-layer polysilicon CMOS flash EEPROM process • Read and write operations using a 5 V single-voltage power supply • Fast access time: 90, 120, and 150 ns • Low power dissipation — Operating current (read): 30 mA (maximum) — Standby |
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Sanyo Semicon Device |
1MEG (131072 words x 8 bits) Flash Memory • Highly reliable 2-layer polysilicon CMOS flash EEPROM process • Read and write operations using a 5 V single-voltage power supply • Fast access time: 90, 120, and 150 ns • Low power dissipation — Operating current (read): 30 mA (maximum) — Standby |
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Sanyo |
LE25FV101T CMOS Flash EEPROM Technology aSingle 3.3-Volt Read and Write Operations .DSector Erase Capability: 256 Bytes per sector wOperating Frequency: 10MHz wLow Power Consumption w Active Current (Read): 25 mA (Max.) High Read/Write Reliability Sector-write |
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Sanyo Semicon Device |
CMOS IC 2M-bit (256K X 8) Serial Flash Memory 30MHz SPI Bus • Read/write operations enabled by single 3.0V power supply: 2.7 to 3.6V supply voltage range • Operating frequency : 30MHz • Temperature range : 0 to 70°C • Serial interface : SPI mode 0, mode 3 supported • Sector size : 256 bytes/page sector, 64K b |
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Sanyo Semicon Device |
CMOS IC 1M-bit (128K X 8) Serial Flash Memory inherent to a serial flash memory device, the LE25FU106B is housed in an 8-pin ultra-miniature package. Serial flash memory devices tend to be at a disadvantage in terms of their read speed, but the LE25FU106B has maximally eliminated this speed-rela |
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Sanyo |
512K-bit (64K x 8) Serial Flash Memory 5 56 63 64 71 FFH Add. Add. Add. X X High Impedance N N+1 N+2 DATA DATA DATA MSB MSB MSB LE25FV055T CS SCK SI SO 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 23 24 31 9FH High Impedance MSB DATA DATA DATA MSB MSB CS SCK SI SO 0 1 2 3 4 5 6 |
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Sanyo Semicon Device |
1MEG (131072 words x 8 bits) Flash Memory • Highly reliable 2-layer polysilicon CMOS flash EEPROM process • Read and write operations using a 5 V single-voltage power supply • Fast access time: 90, 120, and 150 ns • Low power dissipation — Operating current (read): 30 mA (maximum) — Standby |
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Sanyo Semicon Device |
1MEG (131072 words x 8 bits) Flash Memory • Highly reliable 2-layer polysilicon CMOS flash EEPROM process • Read and write operations using a 5 V single-voltage power supply • Fast access time: 90, 120, and 150 ns • Low power dissipation — Operating current (read): 30 mA (maximum) — Standby |
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Sanyo Semicon Device |
1MEG (131072 words x 8 bits) Flash Memory • Highly reliable 2-layer polysilicon CMOS flash EEPROM process • Read and write operations using a 5 V single-voltage power supply • Fast access time: 90, 120, and 150 ns • Low power dissipation — Operating current (read): 30 mA (maximum) — Standby |
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Sanyo Semicon Device |
16 Megabit FlashBank Memory 1 Sp ec ifi ca tio ns • • • • • • • • • • Single 3.0-Volt Read and Write Operations • Separate Memory Banks by Address Space – Bank1: 4Mbit (256K x 16 / 512K x 8) Flash – Bank2: 12Mbit (768K x 16 / 1536K x 8) Flash – Simultaneous Read and Write C |
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Sanyo Semicon Device |
4M-bit Serial Flash Memory 30MHz SPI Bus • Read/write operations enabled by single 3.0V power supply: 2.7 to 3.6V supply voltage range • Operating frequency : 30MHz • Temperature range : 0 to 70°C • Serial interface : SPI mode 0, mode 3 supported • Sector size : 256 bytes/page sector, 64K b |
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Sanyo Semicon Device |
4M-bit (512K X 8) Serial Flash Memory • Read/write operations enabled by single 3.0V power supply: 2.7 to 3.6V supply voltage range • Operating frequency : 50MHz • Temperature range : 0 to +70°C,-40 to 85°C(Planning) Continued on next page. * This product is licensed from Silicon Storag |
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Sanyo Semicon Device |
Two Wire Serial Interface EEPROM to prohibit write operations under low voltage conditions. * I2C Bus is a trademark of Philips Corporation. * This product is licensed from Silicon Storage Technology, Inc. (USA), and manufactured and sold by SANYO Semiconductor Co., Ltd. Any and al |
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Sanyo |
32 Megabit FlashBank Memory 1 Sp ec ifi ca tio ns • • • • • • • • • Single 3.0-Volt Read and Write Operations • Separate Memory Banks by Address Space – Bank1: 16Mbit (1024K x 16 / 2048K x 8) Flash – Bank2: 16Mbit (1024K x 16 / 2048K x 8) Flash – Simultaneous Read and Write |
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Sanyo Semicon Device |
1MEG (131072 words x 8 bits) Flash Memory • Highly reliable 2-layer polysilicon CMOS flash EEPROM process • Read and write operations using a 5 V single-voltage power supply • Fast access time: 120 and 150 ns • Low power dissipation — Operating current (read): 12 mA (maximum) — Standby curre |
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Sanyo Semicon Device |
1MEG (131072 words x 8 bits) Flash Memory • Highly reliable 2-layer polysilicon CMOS flash EEPROM process • Read and write operations using a 5 V single-voltage power supply • Fast access time: 120 and 150 ns • Low power dissipation — Operating current (read): 12 mA (maximum) — Standby curre |
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Sanyo Semicon Device |
1MEG (131072 words x 8 bits) Flash Memory • Highly reliable 2-layer polysilicon CMOS flash EEPROM process • Read and write operations using a 5 V single-voltage power supply • Fast access time: 120 and 150 ns • Low power dissipation — Operating current (read): 12 mA (maximum) — Standby curre |
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