| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor · Large current capacity (IC=2A). · Adoption of MBIT process. · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V). Specifications Absolute Maximum Ratings at Ta = 25˚C Param |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC3895] Specifications Absolute Maximum Ratings at Ta = 25˚C Paramete |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
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Sanyo |
NPN Triple Diffused Planar Silicon Transistor · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC3894] Specifications Absolute Maximum Ratings at Ta = 25˚C Paramete |
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Sanyo |
NPN Triple Diffused Planar Silicon Transistor · High speed (tf=100ns typ). · High reliability (Adoption of HVP process). · High breakdown voltage (VCBO=1500V). · Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC3896] Specifications Absolute Maximum Ratings at Ta = 25˚C Paramete |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor • • • • • Large current capacity (IC=2A). Adoption of MBIT process. High DC current gain (hFE=1000 to 2000). Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). High VEBO(VEBO≥15V). Specifications Absolute Maximum Ratings at Ta=25°C Parame |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor · Large current capacity (IC=2A). · Adoption of MBIT process. · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V). Package Dimensions unit:mm 2043A [2SC3808] Specifications |
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Sanyo Semicon Device |
NPN Transistor · Adoption of FBET and MBIT processes. · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V). · Small Cob (Cob=2.0pF typ). Package Dimensions unit:mm 2033 [2SC3820] Specifica |
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Sanyo |
CMOS LSI / 4M DRAM |
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Sanyo Semicon Device |
AM Low Voltage Electronic Tuning Applications • • • Diffused Junction Type Silicon Composite Varactor AM Low Voltage Electronic Tuning Applications Twin type varactor diode for low-voltage AM electronic tuning use. Low voltage (5.5V). High Q. Specifications Absolute Maximum Ratings at Ta=25° |
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Sanyo Semicon Device |
EPITAXIAL PLANAR SILICON TRANSISTORS |
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Sanyo |
NPN Epitaxial Planar Silicon Transistor · Large current capacity (IC=2A). · Adoption of MBIT process. · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V). Package Dimensions unit:mm 2043A [2SC3808] Specifications |
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Sanyo |
NPN Epitaxial Planar Type Silicon Transistor · Adoption of FBET and MBIT processes. · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V). · Small Cob (Cob=2.0pF typ). Package Dimensions unit:mm 2033 [2SC3820] Specifica |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor · Large current capacity (IC=2A). · Adoption of MBIT process. · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V). Specifications Absolute Maximum Ratings at Ta = 25˚C Param |
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Sanyo Semicon Device |
NPN Transistor · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC3894] Specifications Absolute Maximum Ratings at Ta = 25˚C Paramete |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC3895] Specifications Absolute Maximum Ratings at Ta = 25˚C Paramete |
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Sanyo Semicon Device |
NPN Transistor · High speed (tf=100ns typ). · High reliability (Adoption of HVP process). · High breakdown voltage (VCBO=1500V). · Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC3896] Specifications Absolute Maximum Ratings at Ta = 25˚C Paramete |
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Sanyo Semicon Device |
NPN Transistor · High speed (tf=100ns typ). · High reliability (Adoption of HVP process). · High breakdown voltage (VCBO=1500V). · Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC3897] Specifications Absolute Maximum Ratings at Ta = 25˚C Paramete |
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