logo

Sanyo C36 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
C3675

Sanyo Semicon Device
2SC3675

· High breakdown voltage (VCEO min=900V).
· Small Cob (Cob typ=2.8pF).
· Wide ASO (Adoption of MBIT process).
· High reliability (Adoption of HVP process). JEDEC : TO-220AB EIAJ : SC46 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter
Datasheet
2
C3637

Sanyo
2SC3637

· High reliability (Adoption of HVP process).
· Fast speed.
· High breakdown voltage.
· Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3637] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage
Datasheet
3
LC361000AMLL

Sanyo
1 MEG (131072 words X 8 bits) SRAM
Datasheet
4
C3688

Sanyo Semicon Device
2SC3688

· Fast speed (t f=100ns typ).
· High breakdown voltage (VCBO=1500V).
· High reliability (adoption of HVP process).
· Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta = 25˚C Pl arameter CV ollector-to-Base Voltage CV ollector-t
Datasheet
5
LC3664RL-10

Sanyo Semicon Device
8K x 8 SRAM
Datasheet
6
C3636

Sanyo Semicon Device
2SC3636

· High reliability (Adoption of HVP process).
· Fast speed.
· High breakdown voltage.
· Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3636] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage
Datasheet
7
C3642

Sanyo Semicon Device
2SC3642

· High reliability (Adoption of HVP process).
· Fast speed.
· High breakdown voltage.
· Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3642] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage
Datasheet
8
C3676

Sanyo
2SC3676

· High breakdown voltage (VCEO min=900V).
· Small Cob (Cob typ=5.0pF).
· Wide ASO (Adoption of MBIT process).
· High reliability (Adoption of HVP process). Package Dimensions unit:mm 2010C [2SC3676] Specifications JEDEC : TO-220AB EIAJ : SC46 1 :
Datasheet
9
2SC3646

Sanyo Semicon Device
PNP/NPN Epitaxial Planar Silicon Transistors

· Adoption of FBET, MBIT processes.
· High breakdown voltage and large current capacity.
· Fast switching time.
· Ultrasmall size making it easy to provide high- density, small-sized hybrid ICs. Package Dimensions unit:mm 2038A [2SA1416/2SC3646] 4.5
Datasheet
10
2SC3651

Sanyo Semicon Device
NPN Transistor

· High DC current gain (hFE=500 to 2000).
· High breakdown voltage (VCEO≥100V).
· Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
· High VEBO (VEBO≥15V).
· Very small size making it easy to provide high- density, small-sized hybrid IC’s.
Datasheet
11
LC36256AMLL-85W

Sanyo
256 K (32768 words x 8 bits) SRAM
Datasheet
12
LC3664BL

Sanyo Semicon Device
64K SRAM
Datasheet
13
C3686

Sanyo Semicon Device
2SC3686
Datasheet
14
2SC3653

Sanyo
PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS
Datasheet
15
LC3664BML-70

Sanyo Semicon Device
64K SRAM
Datasheet
16
LC3664RL-12

Sanyo Semicon Device
8K x 8 SRAM
Datasheet
17
LC3664RML-12

Sanyo Semicon Device
8K x 8 SRAM
Datasheet
18
LC3664RMSL-10

Sanyo Semicon Device
8K x 8 SRAM
Datasheet
19
LC3664RMSL-15

Sanyo Semicon Device
8K x 8 SRAM
Datasheet
20
C3644

Sanyo
2SC3644

· High reliability (Adoption of HVP process).
· High speed.
· High breakdown voltage.
· Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3644] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage
Datasheet



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact