| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Sanyo Semicon Device |
P-Channel Silicon MOSFET • • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Vo |
|
|
|
|
Sanyo Semicon Device |
2SJ634 • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. 2SJ634 P-Channel Silicon MOSFET 2SJ634 DC / DC Converter Applications Package Dimensions unit : mm 2083B [2SJ634] 6.5 5.0 2.3 4 0.5 5.5 1.5 7.0 0.85 0.7 1.2 0.8 1.6 7.5 0.6 12 3 2. |
|
|
|
|
Sanyo |
2SJ421 · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. P-Channel Silicon MOSFET 2SJ421 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2116 [2SJ421] 85 0.1 1.5 1.8max 4.4 0.3 6.0 1 5.0 4 Specifications Absolute Maximum |
|
|
|
|
Sanyo Semicon Device |
P-Channel MOSFET |
|
|
|
|
Sanyo Semicon Device |
P-Channel MOSFET · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. · Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SJ339] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 18.1 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 0.7 2.55 Specifications |
|
|
|
|
Sanyo Semicon Device |
2SJ629 • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Curr |
|
|
|
|
Sanyo Semicon Device |
P-Channel MOSFET · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. P-Channel Silicon MOSFET 2SJ189 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2083B [2SJ189] 6.5 5.0 4 2.3 0.5 5.5 1.5 7.0 unit:mm 2092B 0.85 0.7 0.6 123 |
|
|
|
|
Sanyo Semicon Device |
P-Channel MOSFET |
|
|
|
|
Sanyo Semicon Device |
P-Channel MOSFET |
|
|
|
|
Sanyo Semicon Device |
P-Channel MOSFET |
|
|
|
|
Sanyo Semicon Device |
P-Channel MOSFET |
|
|
|
|
Sanyo Semicon Device |
P-Channel MOSFET and Applications • Low ON-state resistance. • Very high-speed switching. • Low-voltage dreve. • Micaless package facilitating easy mounting. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current (D.C) Drain C |
|
|
|
|
Sanyo Semicon Device |
General-Purpose Switching Device • • • • Package Dimensions unit : mm 2063A [2SJ657] 10.0 3.2 3.5 7.2 Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. 4.5 2.8 18.1 16.0 5.6 14.0 1.6 1.2 0.75 2.4 0.7 2.55 1 2 3 2.55 2.4 Specification |
|
|
|
|
Sanyo Semicon Device |
2SJ584 · Low ON-resistance. · Ultrahigh-speed switching. · Micaless package facilitating mounting. www.DataSheet4U.com 3.2 Package Dimensions unit:mm 2078B [2SJ584LS] 10.0 3.5 7.2 4.5 2.8 16.1 16.0 0.9 1.2 14.0 3.6 0.75 1 2 3 2.4 0.7 Specification |
|
|
|
|
Sanyo Semiconductor Corporation |
2SJ340 · Low ON-resistance. · Ultrahigh-speed switching. · 4V drive. · Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the surface mountable package. Package Dimensions unit:mm 2093A [2SJ340] 0.9 10.2 4.5 |
|
|
|
|
Sanyo Semicon Device |
P-Channel MOSFET · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. P-Channel Silicon MOSFET 2SJ190 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2062A [2SJ190] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 1 3.0 0.75 Sp |
|
|
|
|
Sanyo Semicon Device |
P-Channel MOSFET · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. P-Channel Silicon MOSFET 2SJ191 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2083B [2SJ191] 6.5 5.0 4 2.3 0.5 5.5 1.5 7.0 unit:mm 2092B 0.85 0.7 0.6 123 |
|
|
|
|
Sanyo Semicon Device |
P-Channel MOSFET · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. P-Channel Silicon MOSFET 2SJ192 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2083B [2SJ192] 6.5 5.0 4 2.3 0.5 5.5 1.5 7.0 unit:mm 2092B 0.85 0.7 0.6 123 |
|
|
|
|
Sanyo Semicon Device |
P-Channel MOSFET · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. P-Channel Silicon MOSFET 2SJ194 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2083B [2SJ194] 6.5 5.0 4 2.3 0.5 5.5 1.5 7.0 unit:mm 2092B 0.85 0.7 0.6 123 |
|
|
|
|
Sanyo Semicon Device |
P-Channel MOSFET · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. P-Channel Silicon MOSFET 2SJ195 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2083B [2SJ195] 6.5 5.0 4 2.3 0.5 5.5 1.5 7.0 unit:mm 2092B 0.85 0.7 0.6 123 |
|