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J629 |
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| Part Number | J629 |
| Manufacturer | Sanyo Semicon Device |
| Description | www.DataSheet.co.kr Ordering number : EN9084A 2SJ629 www.DataSheet4U.com SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ629 Features • • • General-Purpose Switching Device Applicati... |
| Features |
• • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (600mm2!0.8mm) Tc=25°C Conditions Ratings --12 ±8 --4.5 --18 1.3 3.5 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown ... |
| Document |
 J629 Data Sheet
PDF 115.31KB |
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