Sangdest Microelectronics 1N5 fiche technique

No.	Partie #	Fabricant	Description
1	1N5817W	Sangdest Microelectronics	SCHOTTKY BARRIER DIODE • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protection • Low power loss, high efficiency • High current capability • Low forward voltage drop • High surge capability • For use in low voltage, high frequency inver
2	1N5819W	Sangdest Microelectronics	SCHOTTKY BARRIER DIODE • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protection • Low power loss, high efficiency • High current capability • Low forward voltage drop • High surge capability • For use in low voltage, high frequency inver
3	1N5391S	Sangdest Microelectronics	General Purpose Rectifiers
4	1N5392S	Sangdest Microelectronics	General Purpose Rectifiers
5	1N5393S	Sangdest Microelectronics	General Purpose Rectifiers
6	1N5395S	Sangdest Microelectronics	General Purpose Rectifiers
7	1N5818W	Sangdest Microelectronics	SCHOTTKY BARRIER DIODE • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protection • Low power loss, high efficiency • High current capability • Low forward voltage drop • High surge capability • For use in low voltage, high frequency inver
8	1N5397S	Sangdest Microelectronics	General Purpose Rectifiers
9	1N5398S	Sangdest Microelectronics	General Purpose Rectifiers
10	1N5399S	Sangdest Microelectronics	General Purpose Rectifiers