| No. | Partie # | Fabricant | Description | Fiche Technique |
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Samsung semiconductor |
(K9xxG08UxM) 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory • Voltage Supply - 2.70V ~ 3.60V • Organization - Memory Cell Array : (1G + 32M) x 8bit - Data Register : (2K + 64) x 8bit • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte • Page Read Operation - Page Size |
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Samsung semiconductor |
(K9xxG08UxA) 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory • Voltage Supply - 2.70V ~ 3.60V • Organization - Memory Cell Array : (1G + 32M) x 8bit - Data Register : (2K + 64) x 8bit • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte • Page Read Operation - Page Size |
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