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K9WAG08U1M |
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| Part Number | K9WAG08U1M |
| Manufacturer | Samsung semiconductor |
| Description | Offered in 1G x 8bit, the K9K8G08U0M is a 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operati... |
| Features |
• Voltage Supply - 2.70V ~ 3.60V • Organization - Memory Cell Array : (1G + 32M) x 8bit - Data Register : (2K + 64) x 8bit • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte • Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 20µs(Max.) - Serial Access : 25ns(Min.) * K9NBG08U5M : 50ns(Min.) • Fast Write Cycle Time - Page Program time : 200µs(Typ.) - Block Erase Time : 1.5ms(Typ.) • Command/Address/Data Multiplexed I/O Port • Hardware Data Protection - Program/Erase Lockout During Power Transitions • Reliable CMOS Floating-Gate Technology ... |
| Document |
 K9WAG08U1M Data Sheet
PDF 1.22MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K9WAG08U1A |
Samsung semiconductor |
(K9xxG08UxA) 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory |
|
| 2 | K9WAG08U1D |
Samsung |
4Gb D-die NAND Flash |
|
| 3 | K9WAG08U1E |
Samsung |
4Gb E-die NAND Flash |
|
| 4 | K9WAG08U1F |
Samsung |
4Gb F-die NAND Flash |
|
| 5 | K9W4G08U1M |
Samsung |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
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