| No. | Partie # | Fabricant | Description | Fiche Technique |
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Samsung semiconductor |
4G x 8 Bit/ 8G x 8 Bit/ 16G x 8 Bit NAND Flash Memory • Voltage Supply - 3.3V Device : 2.7V ~ 3.6V • Organization - Memory Cell Array : (2G + 109M) x 8bit - Data Register : (4K + 218) x 8bit • Automatic Program and Erase - Page Program : (4K + 218)Byte - Block Erase : (512K + 27.25K)Byte • Page Read Ope |
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