logo

Samsung semiconductor K8S DataSheet

No. Partie # Fabricant Description Fiche Technique
1
K8S6415ETB

Samsung semiconductor
(K8S6415ExB) 64M Bit Multi Bank NOR Flash Memory

• Single Voltage, 1.7V to 1.95V for Read and Write operations
• Organization - 4,194,304 x 16 bit ( Word Mode Only)
• Multiplexed Data and Address for reduction of interconnections - A/DQ0 ~ A/DQ15
• Read While Program/Erase Operation
• Multiple Bank
Datasheet
2
K8S6415EBB

Samsung semiconductor
(K8S6415ExB) 64M Bit Multi Bank NOR Flash Memory

• Single Voltage, 1.7V to 1.95V for Read and Write operations
• Organization - 4,194,304 x 16 bit ( Word Mode Only)
• Multiplexed Data and Address for reduction of interconnections - A/DQ0 ~ A/DQ15
• Read While Program/Erase Operation
• Multiple Bank
Datasheet



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact