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K8S6415EBB |
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| Part Number | K8S6415EBB |
| Manufacturer | Samsung semiconductor |
| Description | is added January 09,2006 www.DataSheet4U.com 1.1 1 Revision 1.1 January, 2006 K8S6415ET(B)B FEATURES • Single Voltage, 1.7V to 1.95V for Read and Write operations • Organization - 4,194,304 x 16 ... |
| Features |
• Single Voltage, 1.7V to 1.95V for Read and Write operations • Organization - 4,194,304 x 16 bit ( Word Mode Only) • Multiplexed Data and Address for reduction of interconnections - A/DQ0 ~ A/DQ15 • Read While Program/Erase Operation • Multiple Bank Architecture - 16 Banks (4Mb Partition) • OTP Block : Extra 256Byte block • Read Access Time (@ CL=30pF) - Asynchronous Random Access Time : www.DataSheet4U.com 90ns (54MHz) / 80ns (66MHz) - Synchronous Random Access Time : 88.5ns (54MHz) / 70ns (66MHz) - Burst Access Time : 14.5ns (54MHz) / 11ns (66MHz) • Burst Length : - Continuous Linear Burst ... |
| Document |
 K8S6415EBB Data Sheet
PDF 973.64KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K8S6415ETB |
Samsung semiconductor |
(K8S6415ExB) 64M Bit Multi Bank NOR Flash Memory |
|
| 2 | K8S1215EBC |
Samsung |
512Mb C-die NOR FLASH |
|
| 3 | K8S1215ETC |
Samsung |
512Mb C-die NOR FLASH |
|
| 4 | K8S1215EZC |
Samsung |
512Mb C-die NOR FLASH |
|
| 5 | K8006 |
ETC |
BASE UNIT |
|