Samsung Semiconductor K6T fiche technique

No.	Partie #	Fabricant	Description
1	K6T1008C2E	Samsung semiconductor	CMOS SRAM • Process Technology: TFT • Organization: 128Kx8 • Power Supply Voltage: 4.5~5.5V • Low Data Retention Voltage: 2V(Min) • Three state o
2	K6T1008U2C	Samsung semiconductor	128K x8 bit Low Power and Low Voltage CMOS Static RAM • Process Technology: 0.4 µm CMOS • Organization: 128K x8 • Power Supply Voltage: K6T1008V2C family: 3.0~3.6V K6T1008U2C family: 2.7~3.3V • Low Data Retention Voltage: 2V(Min) • Three state output and TTL Compatible • Package Type: 32-SOP-525, 32-TSO
3	K6T4016U4C	Samsung semiconductor	CMOS SRAM • Process Technology: TFT • Organization: 256K x16 • Power Supply Voltage K6T4016V4C Family: 3.0~3.6V K6T4016U4C Family: 2.7~3.3V • Low Data Retention Volt
4	K6T1008C2C	Samsung semiconductor	CMOS SRAM
5	K6T0808V1D	Samsung semiconductor	CMOS SRAM
6	K6T0808U1D	Samsung semiconductor	CMOS SRAM
7	K6T4016V4C	Samsung semiconductor	CMOS SRAM • Process Technology: TFT • Organization: 256K x16 • Power Supply Voltage K6T4016V4C Family: 3.0~3.6V K6T4016U4C Family: 2.7~3.3V • Low Data Retention Volt
8	K6T4016U3C	Samsung semiconductor	CMOS SRAM
9	K6T4016V3C	Samsung semiconductor	CMOS SRAM
10	K6T4008V1C	Samsung semiconductor	CMOS SRAM
11	K6T4008U1C	Samsung semiconductor	CMOS SRAM
12	K6T4008C1C	Samsung semiconductor	CMOS SRAM • Process Technology: TFT • Organization: 512Kx8 • Power Supply Voltage: 4.5~5.5V • Low Data Retention Voltage: 2V(Min) • Three state output and TTL Compatible • Package Type: 32-DIP-600, 32-SOP-525, 32-TSOP2-400F/R GENERAL DESCRIPTION The K6T4008C1
13	K6T4008C1B	Samsung semiconductor	CMOS SRAM
14	K6T0808C1D	Samsung semiconductor	CMOS SRAM
15	K6T8008C2M	Samsung semiconductor	1Mx8 bit Low Power and Low Voltage CMOS Static RAM • Process Technology: TFT • Organization: 1M x8 • Power Supply Voltage: 4.5~5.5V • Low Data Retention Voltage: 2.0V(Min) • Three state output and TTL Compatible • Package Type: 44-TSOP2-400F/R CMOS SRAM GENERAL DESCRIPTION The K6T8008C2M families ar
16	K6T8016C3M	Samsung semiconductor	512Kx16 bit Low Power CMOS Static RAM • Process Technology: TFT • Organization: 512K x16 • Power Supply Voltage: 4.5~5.5V • Low Data Retention Voltage: 2.0V(Min) • Three state output and TTL Compatible • Package Type: 44-TSOP2-400F/R CMOS SRAM GENERAL DESCRIPTION The K6T8016C3M families
17	K6T2008U2A	Samsung semiconductor	256Kx8 bit Low Power and Low Voltage CMOS Static RAM Draft Data May 26, 1998 October 8, 1998 July 21, 1999 Remark Advance Final Final 2.01 October 24, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specificatio
18	K6T2008V2A	Samsung semiconductor	256Kx8 bit Low Power and Low Voltage CMOS Static RAM Draft Data May 26, 1998 October 8, 1998 July 21, 1999 Remark Advance Final Final 2.01 October 24, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specificatio
19	K6T2008S2A	Samsung Semiconductor	256K X 8 Bit Low Power And Low Voltage CMOS Static RAM • Process Technology: TFT • Organization: 256Kx8 • Power Supply Voltage: 2.3 ~ 2.7V • Low Data Retention Voltage: 2V(Min) • Three state output and TTL Compatible • Package Type: 32-TSOP1-0813.4F, 48(36)-FBGA-6.00x7.00 CMOS SRAM GENERAL DESCRIPTION T
20	K6T2008S2M	Samsung Semiconductor	256K X 8 Bit Low Power And Low Voltage CMOS Static RAM • Process Technology: TFT • Organization: 256Kx8 • Power Supply Voltage K6T2008S2M Family: 2.3~2.7V • Low Data Retention Voltage: 2V(Min) • Three state output and TTL Compatible • Package Type: 32-TSOP1-0820F, 32-TSOP1-0813.4F CMOS SRAM GENERAL DESC