Samsung M31 fiche technique

No.	Partie #	Fabricant	Description
1	M312L2920BG0-A2	Samsung	DDR SDRAM Registered Module • Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • P
2	M312L2920BG0-B0	Samsung	DDR SDRAM Registered Module • Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • P
3	M312L2920BT	Samsung	DDR SDRAM Registered Module • Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • P
4	M312L2920BTS-A2	Samsung	DDR SDRAM Registered Module • Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • P
5	M312L2920BTS-CAA	Samsung	DDR SDRAM Registered Module • Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • P
6	M312L5720GH3-CB3	Samsung	DDR SDRAM Registered DIMM
7	M312L2828ET0	Samsung	DDR SDRAM Registered Module • Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition •
8	M312L2920BG0-CB3	Samsung	DDR SDRAM Registered Module • Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • P
9	M312L2923BTS-CAA	Samsung	DDR SDRAM Registered Module • Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • P
10	M312L5720BG0-A2	Samsung	DDR SDRAM Registered Module • Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • P
11	M312L5720BG0-B0	Samsung	DDR SDRAM Registered Module • Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • P
12	M312L5720BG0-CB3	Samsung	DDR SDRAM Registered Module • Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • P
13	CIM31U601	Samsung	Chip Bead - Smallest inductors suitable for surface mounting - Perfect shape for automatic mounting, with no directionality - Excellent solderability and high heat resistance for either flow or reflow soldering - Monolithic inorganic material construction for
14	CIM31J221	Samsung	Chip Bead - Smallest inductors suitable for surface mounting - Perfect shape for automatic mounting, with no directionality - Excellent solderability and high heat resistance for either flow or reflow soldering - Monolithic inorganic material construction for
15	CIM31J301	Samsung	Chip Bead - Smallest inductors suitable for surface mounting - Perfect shape for automatic mounting, with no directionality - Excellent solderability and high heat resistance for either flow or reflow soldering - Monolithic inorganic material construction for
16	CIM31J801	Samsung	Chip Bead - Smallest inductors suitable for surface mounting - Perfect shape for automatic mounting, with no directionality - Excellent solderability and high heat resistance for either flow or reflow soldering - Monolithic inorganic material construction for
17	CIM31J152	Samsung	Chip Bead - Smallest inductors suitable for surface mounting - Perfect shape for automatic mounting, with no directionality - Excellent solderability and high heat resistance for either flow or reflow soldering - Monolithic inorganic material construction for
18	M312L2920BG0	Samsung	DDR SDRAM Registered Module • Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • P
19	M312L2923BG0-A2	Samsung	DDR SDRAM Registered Module • Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • P
20	M312L2923BG0-B0	Samsung	DDR SDRAM Registered Module • Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • P