| No. | Partie # | Fabricant | Description | Fiche Technique |
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Samsung |
512Mb C-die NOR FLASH ................................................................................................................................................................ 5 2.0 GENERAL DESCRIPTION ............................................................... |
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Samsung |
512Mb C-die NOR FLASH ................................................................................................................................................................ 5 2.0 GENERAL DESCRIPTION ............................................................... |
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Samsung |
512Mb C-die NOR FLASH ................................................................................................................................................................ 5 2.0 GENERAL DESCRIPTION ............................................................... |
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Samsung semiconductor |
(K8S6415ExB) 64M Bit Multi Bank NOR Flash Memory • Single Voltage, 1.7V to 1.95V for Read and Write operations • Organization - 4,194,304 x 16 bit ( Word Mode Only) • Multiplexed Data and Address for reduction of interconnections - A/DQ0 ~ A/DQ15 • Read While Program/Erase Operation • Multiple Bank |
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Samsung semiconductor |
(K8S6415ExB) 64M Bit Multi Bank NOR Flash Memory • Single Voltage, 1.7V to 1.95V for Read and Write operations • Organization - 4,194,304 x 16 bit ( Word Mode Only) • Multiplexed Data and Address for reduction of interconnections - A/DQ0 ~ A/DQ15 • Read While Program/Erase Operation • Multiple Bank |
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