| No. | Partie # | Fabricant | Description | Fiche Technique |
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Samsung Electronics |
FLASH MEMORY • Voltage Supply : 2.7 V ~ 3.6 V • Organization - Memory Cell Array : (2G + 64M) x 8bit - Data Register : (4K + 128) x 8bit • Automatic Program and Erase - Page Program : (4K + 128)Byte - Block Erase : (512K + 16K)Byte • Page Read Operation - Page Si |
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Samsung Electronics |
Flash Memory • Voltage Supply : 2.7 V ~ 3.6 V • Organization - Memory Cell Array : (2G + 64M)bit x 8bit - Data Register : (2K + 64)bit x8bit • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)Byte • Page Read Operation - Page |
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