| No. | Partie # | Fabricant | Description | Fiche Technique |
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SamHop Microelectronics |
N-Channel MOSFET Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D S OT 23-3L D S G G S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-S |
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SamHop Microelectronics |
P-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. S OT -23 D S G G D S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Sou |
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SamHop Microelectronics |
P-Channel Enhancement Mode Field Effect Transistor Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = -250uA V DS = -16V, V GS = 0V V GS = 12V, V DS =0V V DS = V GS , ID =-250uA V GS = -4.5V, ID = -2.5A V |
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SamHop Microelectronics |
P-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. S OT -23 D S G G D S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Sou |
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SamHop Microelectronics |
N-Channel MOSFET rce Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 32V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 2 |
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SamHop Microelectronics |
Dual N-Channel E nhancement Mode Field Effect Transistor rwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 16V, V |
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SamHop Microelectronics |
P-Channel Enhancement Mode Field Effect Transistor eakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) V GS = 0V, ID = -250uA V DS = -16V, V GS = 0V V GS = 10V, V DS = 0V V DS = V GS , ID =-250uA V GS = -4.5V, ID = -4.0A V GS = -2.5V, ID = -2.0A V |
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SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor t Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 16V, V GS = 0V V GS = 12V, V DS = 0V V DS = V GS , ID = 250uA V GS = 4.5V, ID =4A V GS = 2.5V, ID =2A V DS = |
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SamHop Microelectronics |
P-Channel Enhancement Mode Field Effect Transistor 0uA V DS = -24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = -250uA V GS = -10V, ID =-3A V GS = -4.5V, ID = -1A V DS = -5V, V GS = -10V V DS = -5V, ID = - 3A Min Typ C Max Unit -30 -1 100 -1 -1.5 -3 44 60 OFF CHAR ACTE R IS TICS Drain-S ourc |
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SamHop Microelectronics |
N-Channel MOSFET Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D S OT 23 D S G S G ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Vol |
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SamHop Microelectronics |
N-Channel MOSFET Super high dense cell design for low R DS(ON). Rugged and reliable. SOT-23 package. D S OT-23 D S G G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Vo |
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SamHop Microelectronics |
N-Channel MOSFET Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D S G G S OT -23 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source |
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SamHop Microelectronics |
Dual N-Channel MOSFET Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. TSOT 26 Top View D1 D2 S1 D1/D2 S2 1 2 3 6 5 4 G1 D1/D2 G2 G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) |
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SamHop Microelectronics |
N-Channel MOSFET Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 16V, V GS = 0V V GS = 10V ,VDS = 0V V DS = V GS , ID |
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SamHop Microelectronics |
P-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID -3.3A R DS(ON) (m Ω) Max 70 @ VGS=-4.5V 100 @ VGS=-2.5V S OT 23-3L D S G G D S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS |
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SamHop Microelectronics |
P-Channel Enhancement Mode Field Effect Transistor 0uA V DS = -32V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = -250uA V GS =-10V, ID = -3.5A V GS =-4.5V, ID= -2A V DS = -5V, V GS = -10V V DS = -10V, ID =-3.5A Min Typ C Max Unit -40 -1 V uA 100 nA -1 -1.6 54 70 -20 8.7 660 -3 65 85 V m ohm m |
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SamHop Microelectronics |
Dual N-Channel E nhancement Mode Field Effect Transistor erwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 16V, V |
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SamHop Microelectronics |
P-Channel Enhancement Mode Field Effect Transistor Super high dense cell design for low R DS(ON). Rugged and reliable. SOT-26 package. ID -4.0A R DS(ON) (m Ω) Max 80 @ VGS=-4.5V 110 @ VGS=-2.5V SOT 26 Top View D D D G 1 2 3 6 5 4 D D S S G ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwis |
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SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor urrent Gate-Body Leakage BV DS S IDS S IGS S b S ymbol Condition V GS = 0V, ID = 250uA V DS = 16V, V GS = 0V V GS = 10V, V DS = 0V V DS = V GS , ID = 250uA V GS = 4.5V, ID = 4A V GS = 2.5V, ID= 2A V DS = 5V, V GS = 4.5V V DS = 5V, ID =4A Min Typ C |
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SamHop Microelectronics |
N-Channel Enhancement Mode Field Effect Transistor Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 16V, V GS = 0V V GS = 8V,V DS = 0V V DS = V GS , ID = 250uA V GS = 4.5V, ID = 2.8A V GS = 2.5V, ID = 2.0 |
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