STS3116E |
Part Number | STS3116E |
Manufacturer | SamHop Microelectronics |
Description | Green Product STS3116E Ver 1.1 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 94 @ VGS=10V 30V 2.6A 107 @ VGS=4.5V 1... |
Features |
Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
D
S OT 23
D S G S G
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b a
TA=25°C TA=70°C TA=25°C TA=70°C
Limit 30 ±12 2.6 2.1 9 1.25 0.8 -55 to 150
Units V V A A A W W °C
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
a
100
°C/W
Details are subject to... |
Document |
STS3116E Data Sheet
PDF 106.90KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | STS31-DIS |
SENSIRION |
High-Accuracy Digital Temperature Sensor | |
2 | STS30-DIS |
SENSIRION |
High-Accuracy Digital Temperature Sensor | |
3 | STS30B6.0 |
SEMIWILL |
Thyristor Surge Suppresser | |
4 | STS30N3LLH6 |
STMicroelectronics |
Power MOSFET | |
5 | STS3400 |
SamHop Microelectronics |
N-Channel E nhancement Mode F ield E ffect Trans is tor |