| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION (ISOWATT220AC) : Insulating voltage = 2000 V DC Capacitance = 12 pF A K K A DESCRIPTION Single chip |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Type STB80NF06 STP80NF06 STW80NF06 VDSS 60V 60V 60V ■ 100% avalanche tested ■ Low threshold drive RDS(on) <0.008Ω <0.008Ω <0.008Ω ID 80A 80A 80A Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Featur |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES te cs Suited for SMPS le us Very low forward losses ds Negligible switching losses so ros High surge current capability b Ps Insulated packages: - O teISOWATT220AC / TO-220FPAC: ) leInsulation voltage = 2000 V DC Capacitance = 12 pF ct(s bsoDESCRIPTI |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED PACKAGE : Insulating voltage = 2500 VRMS Capacitance = 7 pF A K DESCRIPTION Single chip rectifier suited for |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED PACKAGE : Insulating voltage = 2500 VRMS Capacitance = 7 pF A K DESCRIPTION Single chip rectifier suited for |
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STMicroelectronics |
8 Mbit 3V Supply Flash Memory SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) s ACCESS TIME: 70, 85, 90,100ns s PROGRAMMING TIME: – 10µs typical – Double Word Programming Option s COMMO |
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STMicroelectronics |
8 Mbit 3V Supply Flash Memory SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) s ACCESS TIME: 70, 85, 90,100ns s PROGRAMMING TIME: – 10µs typical – Double Word Programming Option s COMMO |
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STMicroelectronics |
8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM a 2 line control function which accommodates the use of multiple memory connection. The two line control function allows: a. the lowest possible memory power dissipation, b. complete assurance that output bus contention will not occur. For the most e |
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STMicroelectronics |
STW80NF55-06 Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s D |
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STMicroelectronics |
N-CHANNEL Power MOSFET Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s D |
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STMicroelectronics |
N - CHANNEL STripFET POWER MOSFET Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES te cs Suited for SMPS le us Very low forward losses ds Negligible switching losses so ros High surge current capability b Ps Insulated packages: - O teISOWATT220AC / TO-220FPAC: ) leInsulation voltage = 2000 V DC Capacitance = 12 pF ct(s bsoDESCRIPTI |
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STMicroelectronics |
IGBT • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 80 A • Tight parameters distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photo |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION (ISOWATT220AC) : Insulating voltage = 2000 V DC Capacitance = 12 pF A K K A DESCRIPTION Single chip |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES te cs Suited for SMPS le us Very low forward losses ds Negligible switching losses so ros High surge current capability b Ps Insulated packages: - O teISOWATT220AC / TO-220FPAC: ) leInsulation voltage = 2000 V DC Capacitance = 12 pF ct(s bsoDESCRIPTI |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION (ISOWATT220AC) : Insulating voltage = 2000 V DC Capacitance = 12 pF A K K A DESCRIPTION Single chip |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES te cs Suited for SMPS le us Very low forward losses ds Negligible switching losses so ros High surge current capability b Ps Insulated packages: - O teISOWATT220AC / TO-220FPAC: ) leInsulation voltage = 2000 V DC Capacitance = 12 pF ct(s bsoDESCRIPTI |
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STMicroelectronics |
8 Mbit 3V Supply Flash Memory SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) s ACCESS TIME: 70, 85, 90,100ns s PROGRAMMING TIME – 10µs typical – Double Word Programming Option s COMMON |
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STMicroelectronics |
8 Mbit 3V Supply Flash Memory SUMMARY s SUPPLY VOLTAGE – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) s ACCESS TIME: 70, 85, 90,100ns s PROGRAMMING TIME – 10µs typical – Double Word Programming Option s COMMON |
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STMicroelectronics |
8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM a 2 line control function which accommodates the use of multiple memory connection. The two line control function allows: a. the lowest possible memory power dissipation, b. complete assurance that output bus contention will not occur. For the most e |
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