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STMicroelectronics |
N-channel Power MOSFET Order codes STF10N105K5 STP10N105K5 STW10N105K5 VDS 1050 V RDS(on) max. ID PTOT 1.3 Ω 30 W 6 A 130 W 130 W 3 12 TO-247 Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3) AM01476v1 Industry’s lowest RDS(on) Industry’s best figure |
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STMicroelectronics |
1 Mbit 64Kb x16 Low Voltage UV EPROM and OTP EPROM a 2 line control function which accommodates the use of multiple memory connection. The two line control function allows: a. the lowest possible memory power dissipation, b. complete assurance that output bus contention will not occur. For the most e |
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STMicroelectronics |
N-channel Power MOSFET 3 1 D2PAK TAB 3 2 1 TO-220FP 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram ' 7$% * 6 AM01476v1 Order codes VDS RDS(on) max ID PTOT STB10N95K5 STF10N95K5 950 V STP10N95K5 STW10N95K5 0.8 Ω 130 W 30 W 8A 130 W • W |
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STMicroelectronics |
IGBT 6 µs of short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 10 A Tight parameter distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor control UPS PFC Descri |
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STMicroelectronics |
1 Mbit 128Kb x8 Low Voltage UV EPROM and OTP EPROM a 2 line control function which accommodates the use of multiple memory connection. The two line control function allows: a. the lowest possible memory power dissipation, b. complete assurance that output bus contention will not occur. For the most e |
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STMicroelectronics |
OMNIFET: FULLY AUTOPROTECTED POWER MOSFET |
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STMicroelectronics |
N-channel Power MOSFET Type STB10NK60Z STB10NK60Z-1 STP10NK60ZFP STP10NK60Z STW10NK60Z s s s s s s Package RDS(on) <0.75 Ω <0.75 Ω <0.75 Ω <0.75 Ω <0.75 Ω ID 10 A 10 A 10 A 10 A 10 A Pw 115 115 35 115 156 VDSS 600 600 600 600 600 V V V V V 3 1 2 1 2 3 3 2 1 TO-220 TO |
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STMicroelectronics |
IEEE 802.15.4 wireless system-on-chip ■ Complete system-on-chip – 32-bit ARM® Cortex™-M3 processor – 2.4 GHz IEEE 802.15.4 transceiver & lower MAC – 128-Kbyte Flash, 8-Kbyte RAM memory – AES128 encryption accelerator – Flexible ADC, SPI/UART/I2C serial communications, and general-purpos |
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STMicroelectronics |
IEEE 802.15.4 wireless system-on-chip ■ Complete system-on-chip – 32-bit ARM® Cortex™-M3 processor – 2.4 GHz IEEE 802.15.4 transceiver & lower MAC – 128-Kbyte Flash, 8-Kbyte RAM memory – AES128 encryption accelerator – Flexible ADC, SPI/UART/I2C serial communications, and general-purpos |
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STMicroelectronics |
IEEE 802.15.4 wireless system-on-chip ■ Complete system-on-chip – 32-bit ARM® Cortex™-M3 processor – 2.4 GHz IEEE 802.15.4 transceiver & lower MAC – 128/192/256-Kbyte Flash, 8/12/16-Kbyte RAM memory – AES128 encryption accelerator – Flexible ADC, SPI/UART/I2C serial communications, and g |
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STMicroelectronics |
Automotive-grade silicon carbide Power MOSFET Order code SCTW100N120G2AG VDS 1200 V RDS(on)typ. 30 mΩ ID 75 A HiP247 D(2, TAB) G(1) S(3) 3 2 1 • AEC-Q101 qualified • High speed switching performance • Very fast and robust intrinsic body diode • Low capacitances • Very high operating juncti |
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STMicroelectronics |
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODE AND BENEFITS VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF trr AND IRM AT 100°C UNDER USERS CONDITIONS F126 (JEDEC DO-204AC) DESCRIPTION Low vo |
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STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR nction-case Max 0.78 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES IEBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 1500 V V CE = 1500 V V EB = 5 |
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STMicroelectronics |
Fast IGBT ■ ■ ■ ■ ■ Optimized for sustain and energy recovery circuits in PDP applications. State-of-the-art STripFET™ technology Peak collector current IRP = 330 A @ TC = 25 °C (see Table 2) Very low-on voltage drop (VCE(sat)) and energy per pulse for improv |
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STMicroelectronics |
IGBT ■ Optimized for sustain and energy recovery circuits in PDP applications. ■ State-of-the-art STripFET™ technology ■ Peak collector current IRP = 330 A @ TC = 25 °C (see Table 2) 3 2 1 TO-220FP 3 2 1 TO-247 ■ Very low-on voltage drop (VCE(sat)) a |
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STMicroelectronics |
IEEE 802.15.4 wireless system-on-chip ■ Complete system-on-chip – 32-bit ARM® Cortex™-M3 processor – 2.4 GHz IEEE 802.15.4 transceiver & lower MAC – 128/192/256-Kbyte Flash, 8/12/16-Kbyte RAM memory – AES128 encryption accelerator – Flexible ADC, SPI/UART/I2C serial communications, and g |
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STMicroelectronics |
silicon carbide Power MOSFET Order code SCTW100N65G2AG VDS 650 V RDS(on) max. 26 mΩ ID 100 A HiP247 3 2 1 • AEC-Q101 qualified • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capabilit |
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STMicroelectronics |
IGBT • Maximum junction temperature: TJ = 175 °C • Low VCE(sat) = 1.55 V (typ.) @ IC = 100 A • Minimized tail current • Tight parameter distribution • Low thermal resistance • Positive VCE(sat) temperature coefficient • Excellent switching performance tha |
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