| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
N-channel Power MOSFET ( 1 ) Ts tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 |
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STMicroelectronics |
STU16NB50 j Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Fa |
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STMicroelectronics |
N-channel Power MOSFET = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 500 500 ±30 16 10 64 160 1.28 3 –65 to 150 150 (1)ISD ≤16A, di/dt ≤100A/µs, |
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STMicroelectronics |
N-channel Power MOSFET Order code STP16N60M2 STU16N60M2 VDS 600 V RDS(on) max. 0.32 Ω ID 12 A • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description These dev |
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STMicroelectronics |
N-channel Power MOSFET TAB Order code VDS RDS(on) max. ID STU16N65M2 650 V 360 mΩ 11 A 3 2 1 • Extremely low gate charge • Excellent output capacitance (Coss) profile IPAK • 100% avalanche tested • Zener-protected D(2, TAB) Applications • Switching appl |
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STMicroelectronics |
N-channel Power MOSFET Type STF16N65M5 STI16N65M5 STP16N65M5 STU16N65M5 STW16N65M5 VDSS @ TJmax RDS(on) max 710 V < 0.279 Ω ■ Worldwide best RDS(on) ■ Higher VDSS rating ■ High dv/dt capability ■ Excellent switching performance ■ Easy to drive ■ 100% avalanche tested |
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