| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
STMicroelectronics |
DUAL N - CHANNEL POWER MOSFET Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s |
|
|
|
|
STMicroelectronics |
DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE 8 VCC + 7 Output2 6 Inverting Input2 5 Non Inverting Input2 s UPSTREAM line driver for Asymmetric Digital Subscriber Line (ADSL) (NT). ORDER CODE Part Number TS635ID TS635IDW Temperature Range -40, +85°C -40, +85°C Package D • • DW Cross Section |
|
|
|
|
STMicroelectronics |
P-Channel Power MOSFET Order code VDS RDS(on) max. ID STS6P3LLH6 30 V 30 mΩ 6A • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is a P-channel Po |
|
|
|
|
STMicroelectronics |
DUAL WIDE BAND OPERATIONAL AMPLIFIER WITH HIGH OUTPUT CURRENT Vcc Non-Inverting input 2 Inverting input 2 Power Down 2 _ + 19 18 17 16 15 14 s UPSTREAM line driver for Assymetric Digital Subscriber Line (ADSL) (NT). ORDER CODE Package Part Number TS612ID Temperature Range D -40, +85°C • + _ 13 12 Output |
|
|
|
|
STMicroelectronics |
DUAL WIDE BAND OPERATIONAL AMPLIFIER WITH HIGH OUTPUT CURRENT er Tstd Tj Rthjc R tha P max. Supply voltage 1) Differential Input Voltage Input Voltage Range 3) 2) Parameter Value ±7 ±2 ±6 -40 to + 85 -65 to +150 150 28 175 715 4) Unit V V V °C °C °C °C/W °C/W mW Operating Free Air Temperature Range TS612ID |
|
|
|
|
STMicroelectronics |
DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE SO) - also available in Tape & Reel (DT) PIN CONNECTIONS (top view) 1 2 3 4 5 6 7 8 9 10 20 Vcc+ 1 Output 1 VccVcc Vcc Vcc Vcc GND Inverting input 1 Non-inverting input 1 Vcc Vcc Vcc Vcc Non-Inverting input 2 Inverting input 2 Power Down 2 _ + |
|
|
|
|
STMicroelectronics |
DIFFERENTIAL VARIABLE GAIN AMPLIFIER FOR ADSL LINE INTERFACE a high input impedance and a low noise current. To minimize the overall noise figure, the source impedance must be less than 3kΩ. This value gives an equal contribution of voltage and current noises. The second stage is a gain/attenuation stage (+12d |
|
|
|
|
STMicroelectronics |
HMOS PARALLEL INTERFACE/TIMER of the PI/T include : TS68000 Bus Compatible Port Modes Include : Bit I/O Unidirectional 8 Bit and 16 Bit Bidirectional 8 Bit and 16 Bit Programmable Handshaking Options 24-Bit Programmable Timer Modes Five Separate Interrupt Vectors Separate Port an |
|
|
|
|
STMicroelectronics |
HCMOS MULTI-FUNCTION PERIPHERAL S COMPATIBLE . . . . . 48 PDIP48 1 PLCC52 (Ordering Information at the end of the Datasheet DESCRIPTION The use of the CMFP in a system can significantly reduce chip count, thereby reducing system cost. The CMFP is completely 68000 bus compatib |
|
|
|
|
STMicroelectronics |
DUAL WIDE BAND OPERATIONAL AMPLIFIER WITH HIGH OUTPUT CURRENT (The Power Down command is a MOS input featuring a high input impedance) VCC = ±2.5Volts, 5Volts, ±6Volts or 12Volts, Tamb = 25°C Symbol Parameter Pin (6) Threshold Voltage for Power Down Mode Vpdw Low Level High Level Iccpdw Rpdw Cpdw Power Down Mod |
|
|
|
|
STMicroelectronics |
DUAL WIDE BAND OPERATIONAL AMPLIFIER WITH HIGH OUTPUT CURRENT h slew rates supporting low harmonic distortion and intermodulation. ORDER CODE Part Number TS616IDW TS616IDWT Temperature Range -40, +85°C -40, +85°C Package DW DW DW = Small Outline Package with Exposed-Pad, T = Tape & Real PIN CONNECTIONS (top v |
|
|
|
|
STMicroelectronics |
DIFFERENTIAL VARIABLE GAIN AMPLIFIER |
|
|
|
|
STMicroelectronics |
DUAL N - CHANNEL POWER MOSFET Size ™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEM |
|
|
|
|
STMicroelectronics |
N-CHANNEL POWER MOSFET Order code VDS RDS(on) max. ID 4 1 STS6NF20V 40 mΩ (@4.5 V) 20 V 6A 45 mΩ (@2.7 V) SO-8 1 S 2 S 8 D 7 D • Ultra low threshold gate drive • 100% avalanche tested • Low gate charge Applications • Switching applications S 3 G 4 6 D D |
|
|
|
|
STMicroelectronics |
P-CHANNEL POWER MOSFET Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s MO |
|