| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
Wideband RF/microwave PLL fractional/integer frequency synthesizer • Output frequency range: 1.925 GHz to 16 GHz – RF out 1 (VCO, VCO÷2): 1.925-8.0 GHz – RF out 2 (VCO x 2): 7.7-16.0 GHz • Very low noise – Normalized phase noise floor: -227 dBc/Hz – VCO phase noise (6.0 GHz): -131 dBc/Hz @ 1 MHz offset – Noise floor |
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STMicroelectronics |
N-channel Power MOSFET ( 1 ) Ts tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 |
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STMicroelectronics |
Power MOSFET Order codes VDSS (@Tjmax) RDS(on) max ID STD11NM60ND STF11NM60ND STI11NM60ND STP11NM60ND STU11NM60ND 650 V < 0.45 Ω 10 A 10 A(1) 10 A 10 A 10 A 1. Limited only by maximum temperature allowed ■ The worldwide best RDS(on)* area amongst the fast |
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STMicroelectronics |
N-channel Power MOSFET Order codes STF6N60M2 STP6N60M2 STU6N60M2 VDS @ TJmax RDS(on) max ID 650 V 1.2 Ω 4.5 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications |
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STMicroelectronics |
N-channel Power MOSFET Order codes VDS RDS(on) max STD2N105K5 STP2N105K5 1050 V 8Ω STU2N105K5 ID 1.5 A PTOT 60 W • Industry’s lowest RDS(on) x area • Industry’s best figure of merit (FoM) • Ultra low gate charge • 100% avalanche tested • Zener-protected Applicatio |
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STMicroelectronics |
USB Transceiver ■ Compliant to USB V2.0 for full-speed (12Mb/s) and low-speed (1.5Mbps) operation = ±14kV on D+, D – lines; ±5kV on VBUS ESD Compliant to IEC-61000-4.2 (level 3) on D+, D- lines Separate I/O supply with operation down to 1.6V Integrated 3.3V output L |
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STMicroelectronics |
N-channel Power MOSFET D ID I DM ( • ) P tot dv/dt( 1 ) Ts tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T o |
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STMicroelectronics |
STU16NB50 j Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Fa |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS RDS(on) max. ID STD11N65M2 STP11N65M2 650 V 0.68 Ω 7A STU11N65M2 • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected PTOT 85 W Package DPAK TO-220 IPAK Appli |
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STMicroelectronics |
N-channel Power MOSFET Order code STU9HN65M2 VDS 600 V RDS(on) max. 0.82 Ω ID 5.5 A • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description This device is an N |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code STU7NF25 VDSS 250 V RDS(on) max. 0.42 Ω • 100% avalanche tested • 175 °C junction temperature ID 8A Applications • Switching applications Figure 1. Internal schematic diagram ' ĆRUĆ7$% * Description This Power MOSFET has been |
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STMicroelectronics |
Standalone USB PD controller • Type-C and USB PD controller (with autorun) • Provider role - up to 5 PDO profiles • Programmable VBUS voltage and current protections • High-side current sensing • Integrated CC/CV regulation • 50 mA VCONN switch (OVP and OCP) • E-marked cable sup |
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STMicroelectronics |
N-Channel MOSFET Order code VDS RDS(on) max. ID STU70R1K3S 700 V 1.4 Ω 5A • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications |
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STMicroelectronics |
N-channel Power MOSFET Order codes VDSS RDS(on) max. STF6N65K3 STFI6N65K3 650 V < 1.3 Ω STU6N65K3 ID 5.4 A Ptot 30 W 110 W ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Improved diode reverse recove |
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STMicroelectronics |
Autonomous USB PD controller • USB power delivery (PD) controller • Type-C attach and cable orientation detection • Single role: provider • Full hardware solution - no software • I2C interface (optional connection to MCU) • Support all USB PD profiles: up to 5 power data o |
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STMicroelectronics |
Standalone USB PD sink controller Product status link STUSB4500 Device summary Order code STUSB4500QTR STUSB4500BJR Description Standalone USB PD sink controller (auto-run mode) Package QFN-24 EP (4x4) WLCSP-25 (2.6x2.6x0.5) Marking 4500 • Auto-run Type-C™ and USB PD sink |
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STMicroelectronics |
N-channel Power MOSFET = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 500 500 ±30 13 8 52 160 1.28 3.5 –65 to 150 150 (1)ISD ≤13A, di/dt ≤130A/µs, |
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STMicroelectronics |
N-channel Power MOSFET = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 500 500 ±30 16 10 64 160 1.28 3 –65 to 150 150 (1)ISD ≤16A, di/dt ≤100A/µs, |
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STMicroelectronics |
N-channel Power MOSFET perature o o Value 1000 1000 ± 30 6 3.9 24 160 1.28 -65 to 150 150 Unit V V V A A A W W/ o C o o C C ( •) Pulse width limited by safe operating area June 1998 1/5 STU6NA100 THERMAL DATA R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junc |
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STMicroelectronics |
N-channel Power MOSFET Type STD95N2LH5 STP95N2LH5 STU95N2LH5 ■ ■ ■ ■ VDSS 25 V 25 V 25 V RDS(on) max < 0.0045 Ω < 0.0049 Ω < 0.0049 Ω ID 3 80 A 80 A 80 A 1 3 2 1 DPAK IPAK RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness |
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