| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
2u/2 POLY/2 METAL BiCMOS MIXED ANALOG-DIGITAL STANDARD CELLS e STKM2000 series, SGS-THOMSON Microelectronics introduces the “state of the art” product for analog signal processing, chain from sensor to actuator. The introduction of new concepts (cells library and CAD) opens the design of analog functions and m |
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STMicroelectronics |
(STK12N05L / STK12N06L) N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR s) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o o Value STK12N06L 60 60 ± 15 12 8 48 50 0.33 -65 to 175 175 Unit 50 50 V V V A A A W W/o C o o C |
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STMicroelectronics |
(STK12N05L / STK12N06L) N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR s) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o o Value STK12N06L 60 60 ± 15 12 8 48 50 0.33 -65 to 175 175 Unit 50 50 V V V A A A W W/o C o o C |
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STMicroelectronics |
N-channel Power MOSFET Type STK28N3LLH5 ■ ■ ■ ■ ■ ■ ■ ■ VDSS 30 V RDS(on) max < 0.0045 Ω RDS(on)*Qg 68.4 nC*mΩ Ultra low top and bottom junction to case thermal resistance RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charg |
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STMicroelectronics |
N-channel Power MOSFET Type STK20N3LLH5 ■ ■ ■ ■ ■ ■ ■ ■ VDSS 30 V RDS(on) max < 0.007 Ω RDS(on)*Qg 68 nC*mΩ Ultra low top and bottom junction to case thermal resistance RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge F |
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STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ STK13003 is reverse pin out versus standard SOT-82 package ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent |
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STMicroelectronics |
Automotive N-channel MOSFET Order code STK130N4LF7AG V DS 40 V RDS(on) max. 3.0 mΩ • AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching app |
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STMicroelectronics |
N-channel Power MOSFET Type STK24N4LLH5 ■ ■ ■ ■ ■ ■ ■ ■ VDSS 40 V RDS(on) max < 0.0055 Ω RDS(on)*Qg 96 nC*mΩ Ultra low top and bottom junction to case thermal resistance RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge |
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STMicroelectronics |
Power MOSFET Type STK24N4LLF5 ■ ■ ■ ■ ■ ■ ■ ■ VDSS 40 V RDS(on) max < 0.0055 Ω RDS(on)*Qg 96 nC*mΩ Ultra low top and bottom junction to case thermal resistance RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge |
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STMicroelectronics |
Automotive-grade N-channel Power MOSFET Order code STK224N4F7AG V DS 40 V RDS(on) max 1.5 mΩ • AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching appli |
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STMicroelectronics |
Automotive-grade N-channel Power MOSFET Order code STK184N4F7AG V DS 40 V RDS(on) max. 2.0 mΩ • AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching appl |
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STMicroelectronics |
Miniature KNX transceiver • Very thin fine pitch 4 x 4 mm VQFNPN24 package • KNX certified, KNX TP1-256 supported • Easy interface to microcontroller • Very small system solution • Two integrated voltage regulators for external use in application – Selectable 3.3 V / 5 V - 20 |
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STMicroelectronics |
Power MOSFET Type STK32N4LLH5 ■ ■ ■ ■ ■ ■ ■ VDSS RDS(on) max RDS(on)*Qg 40 V < 0.0025 Ω 106.4nC*mΩ Ultra low top and bottom junction to case thermal resistance Extremely low on-resistance RDS(on) RDS(on)*Qg industry benchmark High avalanche ruggedness Fully enc |
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STMicroelectronics |
Power MOSFET Type STK32N4LLF5 ■ ■ ■ ■ ■ ■ ■ VDSS RDS(on) max RDS(on)*Qg 40 V < 0.0025 Ω 106.4nC*mΩ Ultra low top and bottom junction to case thermal resistance Extremely low on-resistance RDS(on) RDS(on)*Qg industry benchmark High avalanche ruggedness Fully enc |
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