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STK184N4F7AG |
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| Part Number | STK184N4F7AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | S(1, 2, 3) This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance ... |
| Features |
Order code STK184N4F7AG
V DS 40 V
RDS(on) max. 2.0 mΩ
• AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications ID 100 A G(4) Description S(1, 2, 3) This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. G4S123DTAB_LFPAK Product status link STK184N4F7AG Pr... |
| Document |
 STK184N4F7AG Data Sheet
PDF 443.67KB |
| Distributor | Stock | Price | Buy |
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