| No. | Partie # | Fabricant | Description | Fiche Technique |
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STMicroelectronics |
N-CHANNEL Power MOSFET 300 2 9 360 – 55 to 175 (1) I SD ≤80A, di/dt ≤300A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX. (2) Starting T j = 25°C, I D = 80A, VDD = 50V Unit V V V 38 27 152 45 0.3 A A A W W/°C V/ns mJ 2500 V °C Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 2 |
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STMicroelectronics |
STP80NF03L-04 Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s H |
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STMicroelectronics |
STP80N70F4 Order code STP80N70F4 VDSS 68 V RDS(on) max < 9.8 mΩ ID 85 A ■ N-channel enhancement mode ■ 100% avalanched rated ■ Low gate charge ■ Very low on-resistance Application Switching applications Description This device is an N-channel Power MOSFE |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Type STB80NF55-06 STB80NF55-06-1 STP80NF55-06 STP80NF55-06FP VDSS 55V 55V 55V 55V RDS(on) <0.0065Ω <0.0065Ω <0.0065Ω <0.0065Ω ID 80A (1) 80A(1) 80A (1) 60A (1) 1. Limited by package ■ Exceptional dv/dt capability ■ 100% avalanche tested ■ Appli |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code STP80N70F6 VDSS max. 68 V RDS(on) max. ID PTOT < 0.008 Ω 96 A 110 W (VGS= 10 V) ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses ■ Very low switching gate |
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STMicroelectronics |
STP80NF75L Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HI |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Order code STP80N70F4 VDSS 68 V RDS(on) max < 9.8 mΩ ID 85 A ■ N-channel enhancement mode ■ 100% avalanched rated ■ Low gate charge ■ Very low on-resistance Application Switching applications Description This device is an N-channel Power MOSFE |
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STMicroelectronics |
N-CHANNEL Power MOSFET Type STP80NF12 VDSS 120 V RDS(on) max < 0.018 Ω ID 80 A • Exceptional dv/dt capability • 100% avalanche tested • Application oriented characterization Application • Switching applications Figure 1. Internal schematic diagram ' 7$% * De |
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STMicroelectronics |
TRISIL ■ Bidirectional crowbar protection ■ Voltage: range from 120 V to 320 V ■ Low VBO / VR ratio ■ Micro capacitance equal to 12 pF @ 50 V ■ Low leakage current: IR = 2 µA max ■ Holding current: IH = 150 mA min. ■ Repetitive peak pulse current: IPP = 80 |
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STMicroelectronics |
N-Channel Power MOSFET Order codes VDS @ RDS(on) TJmax max STD80N10F7 0.01 Ω STF80N10F7 0.01 Ω 100 V STH80N10F7-2 0.0095 Ω STP80N10F7 0.01 Ω ID 70 A 40 A 80 A PTOT 85 W 30 W 110 W • Extremely low gate charge • Ultra low on-resistance • Low gate input resistan |
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STMicroelectronics |
8 Mbit/ Low Voltage/ Serial Flash Memory With 25 MHz SPI Bus Interface SUMMARY s 8 Mbit of Flash Memory s Figure 1. Packages Page Program (up to 256 Bytes) in 1.5ms (typical) Sector Erase (512 Kbit) in 2 s (typical) Bulk Erase (8 Mbit) in 10 s (typical) 2.7 V to 3.6 V Single Supply Voltage SPI Bus Compatible Serial In |
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STMicroelectronics |
STP80N55-08 Type STB80NF55-08T4 STP80NF55-08 STW80NF55-08 VDSS 55 V 55 V 55 V ■ Standard threshold drive RDS(on) max < 0.008 Ω < 0.008 Ω < 0.008 Ω ID 80 A 80 A 80 A Application ■ Switching applications Description This Power MOSFET is the latest developme |
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STMicroelectronics |
N-CHANNEL Power MOSFET www.DataSheet4U.com Type STB80NF06 STP80NF06 STW80NF06 VDSS 60V 60V 60V RDS(on) <0.010Ω <0.010Ω <0.010Ω ID 80A 80A 1 3 2 80A TO-220 TO-247 ■ ■ ■ Exceptional dv/dt capability 100% avalanche tested Low threshold drive 3 1 Description This Pow |
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STMicroelectronics |
N-CHANNEL Power MOSFET Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s SO |
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STMicroelectronics |
N-CHANNEL Power MOSFET Type STP80NF10FP VDSS 100V RDS(on) <0.015Ω ■ Exceptional dv/dt capability ■ 100% Avalanche tested ■ Application oriented characterization ID(1) 38A Description This Power MOSFET series realized with STMicroelectronics unique STripFET process ha |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS RDS(on) max. ID STP80N240K6 800 V 220 mΩ 16 A • Worldwide best RDS(on) x area • Worldwide best FOM (figure of merit) • Ultra low gate charge • 100% avalanche tested • Zener-protected Applications • Flyback converter • Adapter |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS RDS(on) max. ID STP80N450K6 800 V 450 mΩ 10 A • Worldwide best RDS(on) x area • Worldwide best FOM (figure of merit) • Ultra low gate charge • 100% avalanche tested • Zener-protected Applications • Flyback converter • Adapter |
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STMicroelectronics |
High power transient voltage suppressor Low clamping voltage Typical peak pulse power: – 1100 W (8/20µs) Stand-off voltage 6.3 V Unidirectional diode Low leakage current: – 0.2 µA at 25 °C Applications Where transient overvoltage protection in ESD sensitive equipment is required, |
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STMicroelectronics |
TELECOM EQUIPMENT PROTECTION TRISIL s s s s s s s Bidirectional crowbar protection Voltage: 270V Low VBO / VR ratio Micro capacitance 15pF typ @ 50V Low leakage current : IR = 2µA max Holding current: IH = 150 mA min Repetitive peak pulse current : IPP = 80 A (10/1000µs) SMB (JEDEC DO |
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STMicroelectronics |
N-CHANNEL POWER MOSFET Type STP80NF10FP VDSS 100V RDS(on) <0.015Ω ■ Exceptional dv/dt capability ■ 100% Avalanche tested ■ Application oriented characterization ID(1) 38A Description This Power MOSFET series realized with STMicroelectronics unique STripFET process ha |
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