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STMicroelectronics |
STP7NC70ZF OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
STP7NK40ZFP OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
STP7NC80ZFP OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied fr |
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STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET |
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STMicroelectronics |
IGBT TYPE VCES VCE(sat) (Max) IC @25°C @100°C STGP7NC60H 600 V STGD7NC60HT4 600 V < 2.5 V < 2.5 V 14 A 14 A s LOWER ON-VOLTAGE DROP (Vcesat) s OFF LOSSES INCLUDE TAIL CURRENT s LOWER CRES/CIES RATIO s HIGH FREQUENCY OPERATION UP TO 70 KHz s NEW |
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STMicroelectronics |
N-Channel MOSFET TAB TO-220 1 23 D(2, TAB) Order code VDS STP7NK40Z 400 V • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected Applications RDS(on) max. 1Ω ID 5.4 A • Switching applications G(1) Description |
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STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET |
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STMicroelectronics |
Power MOSFET Type STF7N95K3 STP7N95K3 STW7N95K3 VDSS 950 V 950 V 950 V RDS(on) max < 1.35 Ω < 1.35 Ω < 1.35 Ω ID Pw 7.2 A 35 W 7.2 A 150 W 7.2 A 150 W ■ 100% avalanche tested ■ Extremely large avalanche performance ■ Gate charge minimized ■ Very low intrin |
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STMicroelectronics |
STP7NK80Z Type STP7NK80Z STP7NK80ZFP STB7NK80Z STB7NK80Z-1 ■ ■ ■ ■ ■ VDSS (@Tjmax) 800V 800V 800V 800V RDS(on) < 1.8Ω < 1.8Ω < 1.8Ω < 1.8Ω ID 5.2A 5.2A 5.2A 5.2A 1 2 3 TO-220 TO-220FP Extremely high dv/dt capability 100% avalange tested Gate charge minim |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS STD7N80K5 STP7N80K5 800 V STU7N80K5 • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested • Zener-protected RDS(on) max ID 1.2 Ω 6A Applications • Switchi |
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STMicroelectronics |
N-channel Power MOSFET Order code VDS RDS(on) max. ID PTOT STP7N105K5 STU7N105K5 1050 V 2 Ω 4 A 110 W STW7N105K5 Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Applications |
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STMicroelectronics |
N-channel MOSFET Type VDSS (@Tjmax) STP7NK80Z STP7NK80ZFP STB7NK80Z STB7NK80Z-1 800V 800V 800V 800V RDS(on) < 1.8Ω < 1.8Ω < 1.8Ω < 1.8Ω ID 5.2A 5.2A 5.2A 5.2A ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsi |
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STMicroelectronics |
STP7NK30Z Type VDSS RDS(on) max ID Pw STF7NK30Z t(s)STP7NK30Z STD7NK30Z 300 V 300 V 300 V < 0.9 Ω < 0.9 Ω < 0.9 Ω 5 A 20 W 5 A 50 W 5 A 50 W uc ■ 100% avalanche tested rod ■ Extremely high dv/dt capability P ■ Gate charge minimized te ■ Very low intrinsi |
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STMicroelectronics |
STP7NK80ZFP Type VDSS (@Tjmax) STP7NK80Z STP7NK80ZFP STB7NK80Z STB7NK80Z-1 800V 800V 800V 800V RDS(on) < 1.8Ω < 1.8Ω < 1.8Ω < 1.8Ω ID 5.2A 5.2A 5.2A 5.2A ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsi |
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STMicroelectronics |
N-channel Power MOSFET TAB Order code VDS RDS(on) max. ID Package uct(s) TO-220 1 23 STP7NM60N 600 V 0.9 Ω • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance 5A TO-220 Prod D(2, TAB) Applications • Switching applicat |
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STMicroelectronics |
N-channel Power MOSFET Type STB7N52K3 STD7N52K3 STF7N52K3 STP7N52K3 VDSS 525 V 525 V 525 V 525 V RDS(on) max < 0.98 Ω < 0.98 Ω < 0.98 Ω ID 6.3 A 6.3 A 6.3 A Pw 3 3 90 W 90 W 25 W 90 W 1 1 D²PAK DPAK < 0.98 Ω 6.3 A(1) 1. Limited by package ■ ■ ■ ■ ■ ■ 100% avalanche |
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STMicroelectronics |
N-channel Power MOSFET Type STD7NM50N STD7NM50N-1 STF7NM50N STP7NM50N VDSS (@Tjmax) 550V 550V 550V 550V RDS(on) <0.78Ω <0.78Ω <0.78Ω <0.78Ω ID 1 3 2 5A 1 3 2 IPAK 5A 5A (1) 5A TO-220 1. Limited only by maximum temperature allowed 1 3 3 1 2 ■ ■ ■ 100% avalanche tes |
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STMicroelectronics |
N-channel Power MOSFET TAB Order code VDS RDS(on) max. ID ct(s) TO-220 1 23 STP7NM80 800 V 1.05 Ω • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance 6.5 A Produ D(2, TAB) Applications • Switching applications solete G |
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STMicroelectronics |
N-Channel MOSFET rent (continuous) at T c = 25 oC ID Drain Current (continuous) at T c = 100 oC IDM( •) Drain Current (pulsed) Ptot Total Dissipation at Tc = 25 oC Derating Factor VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Juncti |
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STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR rent (continuous) at T c = 25 oC ID Drain Current (continuous) at T c = 100 oC IDM( •) Drain Current (pulsed) Ptot Total Dissipation at Tc = 25 oC Derating Factor VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Juncti |
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